Memory device and method of making same
View Patent ↗A radial memory device includes a phase-change material, a first electrode in electrical communication with the phase-change material, the first electrode having a first area of electrical communication with the phase-change material. A second electrode in electrical communication with the phase-change material, the second electrode having a second area of electrical communication with the phase-change material, and the second area being laterally spacedly disposed from the first area. Additionally, the radial memory device includes a dielectric layer disposed between the first electrode and the second electrode, the dielectric layer having an opening therethrough, the phase-change material being disposed in the opening, wherein the phase-change material is disposed at least partially above the second electrode. Further, a method of making a memory device is disclosed.
1. A memory element comprising:
a phase-change material;
a first electrode in electrical communication with said phase-change material, said first electrode having a first surface in a first direction, said first surface including a first area of physical contact with said phase-change material;
a second electrode in electrical communication with said phase-change material, said second electrode being spacedly disposed from said first area of physical contact in said first direction, said second electrode further being spacedly disposed from said first area of contact in a second direction normal to said first direction, said second electrode not overlying said first area of physical contact; and
a first dielectric layer disposed between said first electrode and said second electrode, said first dielectric layer having an opening therethrough, said phase-change material being disposed in said opening, wherein said phase-change material is being further disposed at least partially above said second electrode.
2. The memory element of claim 1 , wherein said second electrode is disposed adjacent to said first dielectric layer.
3. The memory element of claim 2 , wherein said first electrode is disposed adjacent to said first dielectric layer.
4. The memory element of claim 1 , wherein said opening is a hole or a trench.
5. The memory element of claim 1 , wherein said first dielectric layer further comprises a sloped portion adjacent to said opening.
6. The memory element of claim 1 , wherein said second electrode substantially circumscribes said first area of physical contact.
7. The memory element of claim 1 , wherein said first direction is a horizontal direction and said second electrode is further vertically spacedly disposed from said first area of physical contact direction is a vertical direction.
8. The memory element of claim 1 , further comprising:
an insulator material disposed above said phase-change material, said insulator material completely overlapping said first area of physical contact, wherein said second electrode is spacedly disposed from said insulator in said second direction.
9. The memory element of claim 1 , wherein said second electrode contacts said first dielectric layer.
10. The memory element of claim 1 , further comprising a second dielectric layer disposed above said second electrode, said second dielectric layer comprising a transparent material.
11. The memory element of claim 1 , wherein said phase-change material contacts a sidewall of said opening.
12. The memory element of claim 1 , wherein said second electrode directly contacts said phase-change material.
13. The memory element of claim 1 , wherein said phase-change material contacts said first dielectric layer.
14. A memory element, comprising:
a phase-change material;
a first electrode electrically coupled to said phase-change material, said first electrode having a first surface in a first direction, said first surface including a first area of physical contact with said phase-change material;
a dielectric material being at least partially in direct contact with said first electrode, said dielectric material having an opening therethrough, said phase-change material at least partially occupying said opening; and
a second electrode being electrically coupled to said phase change material, said second electrode being at least partially in direct contact with said dielectric material, said second electrode not overlying said first area of physical contact, said second electrode being spacedly disposed from said first area of physical contact in said first direction, said second electrode further being spacedly disposed from said first area of contact in a second direction normal to said first direction.
15. The memory element of claim 14 , further comprising an insulating layer disposed above said phase-change material.
16. The memory element of claim 15 , wherein said insulating layer is disposed adjacent said phase-change material.
17. The memory element of claim 16 , wherein said phase-change material is disposed above said first electrode and said second electrode.
18. The memory element of claim 16 , wherein said phase-change material comprises a chalcogenide material.
19. The memory element of claim 16 , wherein said second electrode circumscribes said opening.
20. The memory element of claim 16 , wherein said second electrode substantially circumscribes said first area of physical contact.
21. The memory element of claim 14 , wherein said second electrode is substantially planar.
22. The memory element of claim 15 , wherein said insulating material comprises a transparent material.
23. The memory element of claim 14 , wherein said phase-change material contacts a sidewall of said opening.
24. The memory element of claim 14 , wherein said second electrode directly contacts said phase-change material.
25. The memory element of claim 14 , wherein said phase-change material contacts said first dielectric layer.