IP Library Granted Patent US 6,869,841
Granted Patent B2
US 6,869,841 · App. 10/384,667 · Granted Mar 22, 2005

Carbon-containing interfacial layer for phase-change memory

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Quick Facts
Patent No.
US 6,869,841
App. No.
10/384,667
Granted
Mar 22, 2005
Kind
B2
Abstract

A phase-change memory cell may be formed with a carbon-containing interfacial layer that heats a phase-change material. By forming the phase-change material in contact, in one embodiment, with the carbon containing interfacial layer, the amount of heat that may be applied to the phase-change material, at a given current and temperature, may be increased. In some embodiments, the performance of the interfacial layer at high temperatures may be improved by using a wide band gap semiconductor material such as silicon carbide.

Claims (13)

1. A method comprising:

forming a carbon-containing interfacial layer on a semiconductor;

increasing the electrical conductivity of said carbon-containing interfacial layer; and

forming a phase-change material over said carbon-containing interfacial layer.

2. The method of claim 1 wherein forming a carbon-containing interfacial layer on a semiconductor includes forming said interfacial layer over a conductive layer formed over a semiconductor.

3. The method of claim 1 wherein forming a carbon-containing interfacial layer includes forming a layer including a wide band gap semiconductor material.

4. The method of claim 3 wherein forming a carbon-containing interfacial layer includes forming a silicon carbide layer.

5. The method of claim 4 further including doping said silicon carbide layer.

6. The method of claim 5 further including doping said silicon carbide layer using ion implantation.

7. The method of claim 1 including forming a pore through an insulator, depositing said carbon-containing interfacial layer over said semiconductor and in said pore.

8. The method of claim 7 including depositing the phase-change material over the carbon-containing interfacial layer in said pore.

9. The method of claim 8 including forming a sidewall spacer between said interfacial layer and said phase-change material.

10. The method of claim 1 wherein forming a phase-change material includes depositing a chalcogenide layer over said interfacial layer.

Assignments (2)
CHANGE OF NAME Recorded Jul 18, 2016
From: CARLOW INNOVATIONS, LLC
To: OVONYX MEMORY TECHNOLOGY, LLC
Reel/Frame 039379/0077 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 8, 2015
From: OVONYX, INC.
To: CARLOW INNOVATIONS LLC
Reel/Frame 037244/0954 →