IP Library Granted Patent US 7,348,620
Granted Patent B2
US 7,348,620 · App. 11/706,000 · Granted Mar 25, 2008

Forming phase change memories

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Quick Facts
Patent No.
US 7,348,620
App. No.
11/706,000
Granted
Mar 25, 2008
Kind
B2
Abstract

Phase change memories may exhibit improved properties and lower cost in some cases by forming the phase change material layers in a planar configuration. A heater may be provided below the phase change material layers to appropriately heat the material to induce the phase changes. The heater may be coupled to an appropriate conductor.

Claims (7)

1. A system comprising:

a phase change memory including a planar phase change layer over a heater and a conductor, said conductor electrically coupled to said heater and said heater physically coupled to said planar phase change layer;

an insulator around said heater and under said planar phase change layer;

a glue layer between said planar phase change layer and said insulator, to secure said planar phase change layer to said insulator; and

a digital signal processor coupled to said memory.

2. The system of claim 1 wherein said planar phase change layer is over a carbon containing layer.

3. The system of claim 2 wherein said carbon containing layer is planar.

Assignments (2)
CHANGE OF NAME Recorded Jul 18, 2016
From: CARLOW INNOVATIONS, LLC
To: OVONYX MEMORY TECHNOLOGY, LLC
Reel/Frame 039379/0077 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 8, 2015
From: OVONYX, INC.
To: CARLOW INNOVATIONS LLC
Reel/Frame 037244/0954 →