Forming sublithographic heaters for phase change memories
View Patent ↗A phase change memory with a heater with sublithographic dimensions may be achieved, in some embodiments, with lower thermal budget. The phase change memory may use a controlled etching process to reduce the lateral dimension of the heater.
1. A phase change memory comprising:
a chalcogenide material;
a heater for said chalcogenide material, said heater having an inverted T-shape with a horizontally extending portion and a vertically extending portion, said vertically extending portion adjacent said chalcogenide material and having a curved concave external surface, tapering inwardly to a vertical tip;
only the vertical tip of said vertically extending portion contacting said chalcogenide material in cross section;
a first dielectric layer having a top surface and a passage through said first dielectric layer, said heater being positioned in said passage, said horizontally extending portion having vertical end walls defining said passage through said first dielectric layer; and
a second dielectric layer over and entirely covering said top surface of said first dielectric layer, said second dielectric layer abutting said curved concave external surface and said chalcogenide material.
2. The memory of claim 1 wherein said vertically extending portion has a sublithographic lateral extent.
3. The memory of claim 1 wherein said heater horizontally extending portion is wider in a lateral direction than said vertically extending portion.
4. The memory of claim 1 wherein said heater vertically extending portion is in contact with said chalcogenide material.
5. A system comprising:
a processor;
a phase change memory coupled to said processor, said phase change memory including a chalcogenide material and a heater having an inverted T-shape, having a wider and narrower portion, said narrower portion of the heater being closer to said chalcogenide material and said narrower portion having a curved concave external surface, tapering inwardly to a vertical tip;
only the vertical tip of said narrower portion contacting said chalcogenide material in cross section;
a first dielectric layer having a top surface and a passage through said first dielectric layer, said heater being positioned in said passage, said horizontally extending portion having vertical end walls defining said passage through said first dielectric layer; and
a second dielectric layer over and entirely covering said top surface of said first dielectric layer, said second dielectric layer abutting said curved concave external surface and said chalcogenide material.
6. The system of claim 5 wherein said narrower portion has a sublithographic lateral extent.
7. The system of claim 5 wherein said wider portion is wider in a lateral direction than said narrower portion.
8. The system of claim 5 wherein said narrower portion is in contact with said chalcogenide material.