Non-volatile single-event upset tolerant latch circuit
View Patent ↗A non-volatile single-event upset (SEU) tolerant latch is disclosed. The non-volatile SEU tolerant latch includes a first and second inverters connected to each other in a cross-coupled manner. The gates of transistors within the first inverter are connected to the drains of transistors within the second inverter via a first feedback resistor. Similarly, the gates of transistors within the second inverter are connected to the drains of transistors within the first inverter via a second feedback resistor. The non-volatile SEU tolerant latch also includes a pair of chalcogenide memory elements connected to the inverters for storing information.
1. A field programmable gate array (FPGA) system comprising:
a first and second inverters connected to each other in a cross-coupled manner, wherein gates of transistors within said first inverter are connected to drains of transistors within said second inverter via a first feedback resistor, and gates of transistors within said second inverter are connected to drains of transistors within said first inverter via a second feedback resistor;
a first FPGA unit connected to said drains of transistors within said first inverter;
a second FPGA unit connected to said drains of transistors within said second inverter;
a first chalcogenide memory element, connected to said first inverter, for receiving and storing device configuration information from said first FPGA unit; and
a second chalcogenide memory elements, connected to said second inverters, for receiving and storing device configuration information from said second FPGA unit.
2. The FPGA system of claim 1 , wherein said first inverter includes a p-channel transistor connected in series with an n-channel transistor.
3. The FPGA system of claim 1 , wherein said second inverter includes a p-channel transistor connected in series with an n-channel transistor.
4. The FPGA system of claim 1 , wherein said first inverter is connected to ground via a first one of said chalcogenide memory elements.
5. The FPGA system of claim 4 , wherein said second inverter is connected to ground via a second one of said chalcogenide memory elements.
6. The FPGA system of claim 1 , wherein said first inverter is connected to V DD via a first one of said chalcogenide memory elements.
7. The FPGA system of claim 6 , wherein said second inverter is connected to V DD via a second one of said chalcogenide memory elements.
8. The FPGA system of claim 1 , wherein said chalcogenide includes germanium, antimony and tellurium.
9. The FPGA system of claim 1 , wherein said FPGA system further includes a first state set up module connected to said first chalcogenide memory element, wherein said first state set up module defines an initial state of said first chalcogenide memory element.
10. The FPGA system of claim 9 , wherein said FPGA system further includes a second state set up module connected to said second chalcogenide memory element, wherein said second state set up module defines an initial state of said second chalcogenide memory element.
11. The FPGA system of claim 1 , wherein device configuration information are automatically loaded from said first and second chalcogenide memory elements to said first and second FPGA units, respectively, during system start-up.