Increasing adherence of dielectrics to phase change materials
View Patent ↗A phase change material is formed over a dielectric material. An impurity is introduced into the dielectric to improve the adherence of said dielectric to said phase change material.
1. A method comprising:
ion implanting a dielectric to improve the adherence of a chalcogenide to said dielectric; and
forming a chalcogenide over said dielectric.
2. A method according to claim 1 , wherein introducing includes implanting an impurity selected from the group consisting of: Si, As, Sb, Ge, B, In, Ti, P. Mo, and W.
3. A method according to claim 2 , including introducing silicon.
4. A method according to claim 3 , including introducing silicon into said dielectric at a concentration between 10 16 and 10 23 atoms/cm 3 .
5. The method of claim 1 including depositing a phase change material directly on said dielectric.
6. The method of claim 1 including forming a planar chalcogenide over said dielectric.