IP Library Granted Patent US 6,969,867
Granted Patent B2
US 6,969,867 · App. 10/426,321 · Granted Nov 29, 2005

Field effect chalcogenide devices

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Quick Facts
Patent No.
US 6,969,867
App. No.
10/426,321
Granted
Nov 29, 2005
Kind
B2
Abstract

Multi-terminal field effect devices comprising a chalcogenide material. The devices include a first terminal, a second terminal and a field effect terminal. Application of a gate signal to the field effect terminal modulates the current passing through the chalcogenide material between the first and second terminals and/or modifies the holding voltage or current of the chalcogenide material between the first and second terminals. The devices may be used as interconnection devices in circuits and networks to regulate current flow between circuit or network elements.

Claims (17)

1. A field effect device comprising:

a chalcogenide material, said chalcogenide material having a conductive state and a resistive state, said conductive state comprising a conductive filament;

a first terminal connected to said chalcogenide material;

a second terminal connected to said chalcogenide material;

and a field effect terminal connected to said chalcogenide material:

wherein said conductive state is formed from said resistive stare by applying a voltage between said first and second terminals.

2. The device of claim 1 , wherein a gate signal provided to said field effect terminal modifies the width or cross-section of said filament.

3. The device of claim 1 , wherein a gate signal provided to said field effect terminal modifies the holding current or holding voltage of said chalcogenide material.

4. The device of claim 1 , wherein a gate signal provided to said field effect terminal modulates the current passing through said chalcogenide material.

5. The device of claim 4 , wherein said gate signal produces an electric field emanating from said field effect terminal, said electric field effecting said modulation of the current passing through said chalcogenide material.

6. The device of claim 4 , wherein said gate signal is provided in the form of a voltage or current.

7. The device of claim 4 , wherein said gate signal is provided in the form of an optical signal.

8. The device of claim 4 , wherein said gate signal adds or removes charge from said field effect terminal.

9. The device of claim 4 , wherein said gate signal is an alternating or pulsed signal.

10. The device of claim 1 , wherein said field effect terminal comprises an insulating material and a conductive material, said conductive material being in physical contact with said insulating material, said conductive material not being in physical contact with said chalcogenide material.

11. A circuit comprising a first element, a second element and an interconnection element connecting said first and second elements, said interconnection element controlling the current passing between said first and second elements, said interconnection element comprising the device of claim 1 .

12. The circuit of claim 11 , further comprising a third element, said third element being connected to the field effect terminal of said interconnection element, said third element providing a signal to said field effect terminal, said signal effecting said control of current passing between said first and second elements.

Assignments (2)
CHANGE OF NAME Recorded Jul 18, 2016
From: CARLOW INNOVATIONS, LLC
To: OVONYX MEMORY TECHNOLOGY, LLC
Reel/Frame 039379/0077 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 8, 2015
From: OVONYX, INC.
To: CARLOW INNOVATIONS LLC
Reel/Frame 037244/0954 →