Memory device and method of making same
View Patent ↗A radial memory device includes a phase-change material, a first electrode in electrical communication with the phase-change material, the first electrode having a substantially planar first area of electrical communication with the phase-change material. The radial memory device also includes a second electrode in electrical communication with the phase-change material, the second electrode having a second area of electrical communication with the phase-change material, the second area being laterally spacedly disposed from the first area and substantially circumscribing the first area. Further, a method of making a memory device is disclosed. The steps include depositing a first electrode, depositing a first insulator, configuring the first insulator to define a first opening. The first opening provides for a generally planar first contact of the first electrode. The method further including the steps of depositing a phase-change material, depositing a second insulator, configuring the second insulator, depositing a second electrode having a second contact laterally displaced from said first contact, and configuring said second electrode.
1. A memory device comprising:
a phase-change material;
a first electrode having a first contact region in physical electrical communication with said phase-change material, said phase-change material being disposed entirely above said first electrode;
an insulator disposed above said first electrode and having a pore opening, said phase-change material being disposed at least partially in said pore; and
a second electrode disposed entirely above said phase-change material and having a second pore opening and a second contact region in physical electrical communication with said phase-change material, said second contact region being entirely laterally spacedly displaced from said first contact region.
2. The memory device of claim 1 , wherein said insulator further comprises a sloped portion adjacent to said pore region, and wherein said first contact region is planar.
3. The memory device of claim 2 , wherein said phase-change material is a layer having a varied thickness portion at least partially determined by said sloped portion.
4. The memory device of claim 1 , wherein said second electrode forms a loop.
5. The memory device of claim 1 , wherein said first contact region being generally planar.