Nitrogenated carbon electrode for chalcogenide device and method of making same
View Patent ↗A nitrogenated carbon electrode suitable for use in a chalcogenide device and method of making the same are described. The electrode comprises nitrogenated carbon and is in electrical communication with a chalcogenide material. The nitrogenated carbon material may be produced by combining nitrogen and vaporized carbon in a physical vapor deposition process.
1. An electronic device, comprising:
a phase-change material; and
an electrode in electrical communication with said phase-change material, said electrode comprising nitrogenated carbons,
wherein the atomic concentration of carbon in said electrode exceeds the atomic concentration of nitrogen in said electrode.
2. The device of claim 1 , wherein said electrode consists essentially of said nitrogenated carbon.
3. The device of claim 1 , wherein said phase-change material comprises a chalcogenide material.
4. The device of claim 1 , wherein said phase-change material is in direct contact with the nitrogenated carbon of said electrode.
5. An electronic device, comprising:
a chalcogenide material; and
an electrode in electrical communication with said chalcogenide material, said electrode comprising nitrogenated carbons,
wherein the atomic concentration of carbon in said electrode exceeds the atomic concentration of nitrogen in said electrode.
6. The device of claim 5 , wherein said electrode consists essentially of said nitrogenated carbon.
7. The device of claim 5 , wherein said chalcogenide material is in direct contact with the nitrogenated carbon of said electrode.
8. An electronic device, comprising:
an S-type threshold switching material; and
an electrode in electrical communication with said switching material, said electrode comprising nitrogenated carbon,
wherein the atomic concentration of carbon in said electrode exceeds the atomic concentration of nitrogen in said electrode.
9. An electronic device, comprising:
a programmable resistance material; and
a nitrogenated carbon material in electrical communication with said programmable resistance material wherein the atomic concentration of carbon in said nitrogenated carbon material exceeds the atomic concentration of nitrogen in said nitrogenated carbon material.
10. device of claim 9 , wherein said programmable resistance material comprises a phase-change material.
11. device of claim 9 , wherein said programmable resistance material comprises a chalcogenide material.
12. device of claim 9 , wherein said nitrogenated carbon material is in direct contact with said programmable resistance material.
13. The electronic device of claim 9 , wherein carbon is the most prevalent element in said nitrogenated carbon material.
14. An electronic device, comprising:
a chalcogenide material; and
a nitrogenated carbon material in electrical communication with said chalcogenide material, wherein the atomic concentration of carbon in said nitrogenated carbon material exceeds the atomic concentration of nitrogen in said nitrogenated carbon material.
15. device of claim 14 , wherein said nitrogenated carbon material is in direct contact with said chalcogenide material.
16. The electronic device of claim 14 , wherein carbon is the most prevalent element in said nitrogenated carbon material.
17. An electronic device, comprising:
an S-type threshold switching material; and
a nitrogenated carbon material in electrical communication with said S-type threshold switching material, wherein the atomic concentration of carbon in said nitrogenated carbon material exceeds the atomic concentration of nitrogen in said nitrogenated carbon material.
18. The electronic device of claim 17 , wherein carbon is the most prevalent element in said nitrogenated carbon material.
19. An electronic device, comprising:
a phase-change material; and
a first material in communication with said phase-change material, said first material consisting essentially of carbon and nitrogen, wherein the atomic concentration of carbon in said first material exceeds the atomic concentration of nitrogen in said first material.
20. The device of claim 19 , wherein said first material comprises a carbon nitride material.
21. The device of claim 19 , wherein said phase-change material comprises a chalcogenide material.
22. The device of claim 19 , wherein said communication includes electrical communication.
23. The device of claim 19 , wherein said communication includes thermal communication.
24. An electronic device, comprising:
a chalcogenide material; and
a first material in electrical communication with said chalcogenide material, said first material consisting essentially of carbon and nitrogen, wherein the atomic concentration of carbon in said first material exceeds the atomic concentration of nitrogen in said first material.
25. The device of claim 24 , wherein said first material comprises a carbon nitride material.
26. An electronic device, comprising:
an S-type threshold switching material; and
a first material in electrical communication with said switching material, said first material consisting essentially of carbon and nitrogen, wherein the atomic concentration of carbon in said first material exceeds the atomic concentration of nitrogen in said first material.
27. A method of making an electronic device, said method comprising:
forming a nitrogenated carbon material, the atomic concentration of carbon in said nitrogenated carbon material exceeding the atomic concentration of nitrogen in said nitrogenated carbon material; and
forming a chalcogenide material, said chalcogenide material being in electrical communication with said nitrogenated carbon material.
28. The method of claim 27 , wherein said forming said nitrogenated carbon material comprises the step of mixing nitrogen with vaporized carbon.
29. The method of claim 27 , wherein said forming said vaporized carbon is formed by a method comprising the step of contacting a carbon target with an ionized gas, the volume ratio of said nitrogen gas to said ionized gas between from about 30 percent to about 70 percent.
30. The method of claim 27 , wherein said forming said nitrogenated carbon material comprises the step of sputtering a target consisting essentially of the elements carbon and nitrogen.
31. The method of claim 27 , wherein said forming said chalcogenide material occurs after said forming said nitrogenated carbon material.