Increasing adherence of dielectrics to phase change materials
View Patent ↗A phase change material is formed over a dielectric material. An impurity is introduced into the dielectric to improve the adherence of said dielectric to said phase change material.
1. A phase change memory comprising:
a phase change material; and
a dielectric in contact with said phase change material, said dielectric including an impurity to improve the adherence of the dielectric to said phase change material.
2. A memory according to claim 1 , wherein said impurity is selected in the group consisting of: Si, As, Sb, Ge, B, In, Ti, P, Mo, and W.
3. A memory according to claim 1 , wherein said impurity is silicon at a concentration of between 10 16 and 10 23 atoms/cm 3 .
4. A memory according to claim 1 , wherein said impurity is an ion implanted impurity.