Optically accessible phase change memory
View Patent ↗A phase change memory may be configured to enable both optical and electrical accessing of the memory. In one embodiment, each cell may be electrically accessed by a laser beam, and at the same time each cell may be electrically accessed by electrical addressing signals.
1. A method comprising:
optically programming a phase change memory after electrically programming said memory.
2. The method of claim 1 including forming a phase change memory with a pair of parallel spaced electrodes and a phase change material between said electrodes.
3. The method of claim 2 including arranging said phase change material and said electrodes laterally.
4. The method of claim 3 including enabling light exposure of said phase change material.
5. The method of claim 4 including enabling light exposure through a thermally insulating material.
6. The method of claim 3 including enabling said phase change material to be electrically accessed through rows and columns.
7. The method of claim 6 including locating said rows and columns to enable light access to said cells.
8. The method of claim 7 including positioning one of said rows and columns below said phase change material.
9. The method of claim 8 including providing a via coupling one of said electrodes to said underlying row or column.
10. The method of claim 1 including using the phase change memory to convert an optical signal to an electrical signal.