Modified contact for programmable devices
View Patent ↗In an aspect, an apparatus is provided that sets and reprograms the state of programmable devices. In an aspect, a method is provided such that an opening is formed through a dielectric exposing a contact formed on a substrate. The resistivity of the contact is modified by at least one of implanting ions into the contact, depositing a material on the contact, and treating the contact with plasma. In an aspect, a spacer is formed within the opening and programmable material is formed within the opening and on the modified contact. A conductor is formed on the programmable material and the contact transmits to a signal line.
1. A system comprising:
a microprocessor;
an input/output (I/O) port; and
a memory including a contact on a substrate, the contact having a resistivity modification, a dielectric on said contact having an opening exposing the contact, a sidewall spacer in said opening in contact with said dielectric, a programmable material formed within the opening and separated from the walls forming the opening in the dielectric, the programmable material touching the contact, and a conductor in contact with said programmable material;
wherein the microprocessor, the I/O port and the memory are connected by a data bus, an address bus and a control bus.
2. The system of claim 1 , wherein the contact comprises one of a uniformly modified contact and a ring-shaped modified contact.
3. The system of claim 1 , wherein the contact has at least one of implanted ions, deposited material and plasma treatment.
4. The system of claim 3 , wherein the implanted ions comprises at least one of oxygen ions, nitrogen ions and carbon ions, embedded at a predetermined depth.
5. The system of claim 3 , wherein the contact having the deposited material comprises a contact having a series resistance of one of 200 ohms to 2000 ohms.
6. The system of claim 1 , wherein the programmable material comprises a chalcogenide memory element.