Programmable resistance memory element with titanium rich adhesion layer
View Patent ↗A programmable resistance memory element comprising an adhesion layer between the programmable resistance material and at least one of the electrodes. Preferably, the adhesion layer is a titanium rich titanium nitride composition.
1. An electrically programmable memory element, comprising:
a programmable resistance material;
a conductive material; and
an additional material between said programmable resistance material and said conductive material, said additional material comprising titanium and nitrogen, wherein the atomic percent said titanium is at least 5% greater than the atomic percent of said nitrogen.
2. The memory element of claim 1 , wherein the atomic percent of said titanium is at least 15% greater than the atomic percent of said nitrogen.
3. The memory element of claim 1 , wherein the atomic percent of said titanium is at least 25% greater than the atomic percent of said nitrogen.
4. The memory element of claim 1 , wherein said additional material consists essentially of said titanium and nitrogen.
5. The memory element of claim 1 , wherein said additional material is a titanium nitride.
6. The memory element of claim 1 , wherein said programmable resistance material is a phase-change material.
7. The memory element of claim 1 , wherein said programmable resistance material comprises at least one chalcogen element.
8. The memory element of claim 1 , wherein said additional material is in direct contact with said programmable resistance material.
9. The memory element of claim 8 , wherein said additional material is in direct contact with said conductive material.
10. An electrical device, comprising:
a chalcogenide material;
a dielectric material; and
an additional material between said chalcogenide material and said dielectric material, said additional material comprising titanium and nitrogen, wherein the atomic percent said titanium is at least 5% greater than the atomic percent of said nitrogen.
11. The device of claim 10 , wherein the atomic percent of said titanium is at least 15% greater than the atomic percent of said nitrogen.
12. The device of claim 10 , wherein the atomic percent of said titanium is at least 25% greater than the atomic percent of said nitrogen.
13. The device of claim 10 , wherein said additional material consists essentially of said titanium and nitrogen.
14. The device of claim 10 , wherein said additional material is a titanium nitride.
15. The device of claim 10 , wherein said additional material is in direct contact with said chalcogenide material.
16. The device of claim 15 , wherein said additional material is in direct contact with said dielectric material.
17. An electrical device, comprising:
a chalcogenide material; and
an additional material in direct contact with said chalcogenide material, said additional material comprising titanium and nitrogen, wherein the atomic percent said titanium is at least 5% greater than the atomic percent of said nitrogen.
18. The device of claim 17 , wherein the atomic percent of said titanium is at least 15% greater than the atomic percent of said nitrogen.
19. The device of claim 17 , wherein the atomic percent of said titanium is at least 25% greater than the atomic percent of said nitrogen.
20. The device of claim 17 , wherein said additional material consists essentially of said titanium and nitrogen.
21. The device of claim 17 , wherein said additional material is a titanium nitride.
22. An electrically programmable memory element, comprising:
a programmable resistance material;
a dielectric material; and
an additional material between said programmable resistance material and said dielectric material, said additional material comprising titanium and nitrogen, wherein the atomic percent said titanium is at least 5% greater than the atomic percent of said nitrogen.
23. The memory element of claim 22 , wherein the atomic percent of said titanium is at least 15% greater than the atomic percent of said nitrogen.
24. The memory element of claim 22 , wherein the atomic percent of said titanium is at least 25% greater than the atomic percent of said nitrogen.
25. The memory element of claim 22 , wherein said additional material consists essentially of said titanium and nitrogen.
26. The memory element of claim 22 , wherein said additional material is a titanium nitride.
27. The memory element of claim 22 , wherein said programmable resistance material is a phase-change material.
28. The memory element of claim 22 , wherein said additional material is in direct contact with said programmable resistance material.
29. The memory element of claim 22 , wherein said additional material is in direct contact with said dielectric material.