Process for forming a thin film of TiSiN, in particular for phase change memory devices
View Patent ↗The process for forming a film of TiSiN includes the following sequence of steps: deposition of a TiN film at medium temperature, for example, 300-450° C., by thermal decomposition of a metallorganic precursor, for example TDMAT (Tetrakis Dimethylamino Titanium); exposition to a silicon releasing gas, such as silane (SiH 4 ) and dichlorosilane (SiH 2 Cl 2 ) at 10-90 sccm—standard cube centimeters per minute—for a quite long time, for example, longer than 10 s but less than 90 s, preferably about 40 s; exposition to a H 2 /N 2 plasma at 200-800 sccm, for 10-90 s, preferably about 40 s.
1. A process for forming a film of TiSiN, comprising:
a) depositing a TiN film;
b) exposing the TiN film to a silicon releasing gas to obtain a TiSiN film without previously exposing the TiN film to a carbon-reducing treatment; and
c) exposing the TiSiN film to a H 2 /N 2 plasma, wherein the TiSiN film is exposed to the plasma at 200-800 sccm (standard cubic centimeters per minute).
2. A process according to claim 1 , wherein step a) comprises thermally decomposing a metallorganic precursor.
3. A process according to claim 2 , wherein step a) is carried out at 300-450° C.
4. A process according to claim 1 , wherein said silicon releasing gas is silane (SiH 4 ) or dichlorosilane (SiH 2 Cl 2 .
5. A process according to claim 4 , wherein step b) comprises exposing the TiN film to the silicon releasing gas for more than 10 s and less than 90 s.
6. A process according to claim 5 , wherein step b) comprises exposing the TiN film for about 40 s.
7. A process according to claim 1 wherein the step of depositing a TiN film comprising thermally decomposing a metallorganic precursor selected from the group consisting of tetrakis dimethylamino titanium (TD MAT) and tetrakis diethylamino titanium (TDLAT).
8. A process for forming a film of TiSin, comprising:
a) depsiting a TiN film;
b) exposing the TiN film to a silicon releasing gas to obtain a TiSiN film without previously exposing the TiN film to a carbon-reducing treatment;
c) exposing the TiSiN film to a H 2 /N 2 plasma, after step c):
d) annealing the TiSiN film in an inert gas environment; wherein step d) is carried out at 600-800° C.
9. A process according to claim 8 , wherein step d) is carried out in an RTP (Rapid Thermal Process) equipment.
10. A process according to claim 8 , comprising, after step c):
e) annealing the TiSiN film in an oxidizing gas environment.
11. A process according to claim 10 , wherein step e) is carried out in an RTP equipment.
12. A process according to claim 10 , wherein step e) is carried out at 500-800° C.
13. A process according to claim 8 , comprising, after step d):
e) annealing the TiSiN film in an oxidizing gas environment.
14. A process according to claim 13 , wherein step e) is carried out in an RTP equipment.
15. A process according to claim 13 , wherein step e) is carried out at 500-800° C.
16. A process of forming a resistive film comprising:
depositing a TiN film, wherein carbon is produced;
reacting the TiN film with silicon to form a TiSiN film, wherein a portion of the carbon is replaced by silicon; and
removing a remaining portion of carbon from the TiSiN film, wherein the TiSiN film has a resistivity of higher than 0.6 mΩ·cm and Si content equals to or higher than 4.5 at %.
17. The process of claim 16 wherein the TiN film is deposited by thermally decomposing a metallorganic precursor comprising titanium, carbon and nitrogen.
18. The process of claim 17 wherein the metallorganic precursor is tetrakis dimethylamino titanium (TDMAT) or tetrakis diethylamino titanium (TDLAT).
19. The process of claim 16 wherein the silicon is produced by decomposing silane or dichlorosilane.
20. The process of claim 16 wherein the remaining portion of carbon is removed by a plasma treatment.
21. The process of claim 16 further comprising annealing the TiSiN film to form the resistive film.