Phase change memory with ovonic threshold switch
View Patent ↗A phase change memory includes a memory element and a selection element. The memory element is embedded in a dielectric and includes a resistive element having at least one sublithographic dimension and a storage region in contact with the resistive element. The selection element includes a chalcogenic material embedded in a dielectric. The chalcogenic material and the storage region are part of a stack having a common etched edge.
1. A method comprising:
forming a planar stack including a phase change material in contact with one of a resistive wall element and a chalcogenic selection material over the phase change material, the stack having a common edge, the phase change material being a material that changes between amorphous and crystalline phases to store information while the chalcogenic selection material is an ovonic threshold switch that does not change phase.
2. A method according to claim 1 , further including forming a resistive wall element in a first opening in an insulating layer, depositing a heater layer covering a bottom and a side wall of said first opening, a portion of said side wall of said heater layer forming said resistive element, filling said opening with insulating material and removing portions of said heater layer and said insulating material protruding from said opening to form a heater region surrounded by an encapsulating structure.
3. A method according to claim 2 , comprising, before depositing a heater layer, forming spacer regions on said side walls of said first opening.
4. A method according to claim 2 , comprising, before filling said opening, depositing a sheath layer on said heater layer.
5. A method according to claim 2 , comprising, before forming said first opening, depositing a glue material layer, and wherein forming said first opening comprises removing selected portions of said glue material layer and removing said glue material layer extending laterally to said stack to form a glue material portion extending only on one side of said heater layer.
6. A method according to claim 1 , further comprising forming a sealing region laterally surrounding said stack.
7. A method according to claim 1 , wherein forming a stack comprises depositing a first layer of a first chalcogenic material, a second layer of a barrier material, a third layer of a second, different chalcogenic material, and a fourth layer of a barrier material.
8. The method of claim 1 , including securing said stack to said heater using a pair of layers sandwiching said heater, said layers protecting said heater from oxidation.