Non-volatile memory device including phase-change material
View Patent ↗A non-volatile memory device including a phase-change material, which has a low operating voltage and low power consumption, includes a lower electrode; a phase-change material layer formed on the lower electrode so as to be electrically connected to the lower electrode, wherein the phase-change material layer includes a phase-change material having a composition represented by Sn X Sb Y Te Z or, alternatively with substitutions, in whole or in part, of silicon and/or indium for tin, arsenic and/or bismuth for antimony, and selenium for tellurium; and an upper electrode formed on the phase-change material layer so as to be electrically connected to the phase-change material layer. Here, 0.001≦X≦0.3, 0.001≦Y≦0.8, 0.1≦Z≦0.8, and X+Y+Z=1.
1. A non-volatile memory device comprising:
a lower electrode;
a phase-change material layer formed on the lower electrode so as to be electrically connected to the lower electrode, wherein the phase-change material layer comprises a phase-change material having a composition represented by at least one of Formulas 3, 4 and 7, below; and
an upper electrode formed on the phase-change material layer so as to be electrically connected to the phase-change material layer;
Sn X (Sb V Q (1-V) ) Y Te Z . [Formula 3]
Sn X Sb Y (Te W Se (1-W) ) Z , [Formula 4]
Sn X (Sb V Q (1-V) ) Y (Te W Se (1-W) ) Z , [Formula 7]
where Q, when present, includes at least one of arsenic (As) and bismuth (Bi); 0≦V≦1; 0≦W≦1; 0.001≦X≦0.3; 0.001≦Y≦0.8; 0.1≦Z≦0.8; V+W<2; and X+Y+Z=1.
2. The non-volatile memory device of claim 1 , wherein the phase-change material has a composition represented by Formula 3, below:
Sn X (Sb V Q (1-V) ) Y Te Z . [Formula 3]
3. The non-volatile memory device of claim 1 , wherein the phase-change material has a composition represented by Formula 4, below:
Sn X Sb Y (Te W Se (1-W) ) Z . [Formula 4]
4. The non-volatile memory device of claim 1 , wherein the phase-change material has a composition represented by Formula 7, below:
Sn X (Sb V Q (1-V) ) Y (Te W Se (1-W) ) Z . [Formula 7]