Electrically programmable memory element
View Patent ↗A programmable resistance memory element including a memory material which is raised above a semiconductor substrate by a dielectric layer.
1. An electrically operated memory element comprising:
a first dielectric layer having an opening therethrough;
a first conductive layer lining the sidewall surface of the opening of said first dielectric layer;
a second dielectric layer formed over said first conductive layer within said opening;
a second conductive layer formed over a top surface of said first conductive layer and a top surface of said second dielectric layer;
a third dielectric layer having an opening therethrough, at least portion of said opening of said third dielectric layer overlying said second dielectric layer; and
a programmable resistance material disposed in said opening and in electrical communication with said second conductive layer.
2. The memory element of claim 1 , wherein the resistivity of said second conductive layer is greater than the resistivity of said first conductive layer.
3. The memory element of claim 1 , wherein said first conductive layer is cup-shaped.
4. The memory element of claim 1 , wherein said programmable resistance material is a phase-change material.
5. The memory element of claim 1 , wherein substantially all of said opening of said third dielectric layer overlies said second dielectric layer.
6. The memory element of claim 1 , wherein said opening of said third dielectric layer is a hole.
7. The memory element of claim 1 , wherein said opening of said third dielectric layer is a hole, substantially all of said hole overlies said second dielectric layer.
8. The memory element of claim 1 , wherein said programmable resistance material comprises a chalcogenide material.