Single level metal memory cell using chalcogenide cladding
View Patent ↗An apparatus including a volume of phase change material disposed between a first conductor and a second conductor on a substrate, and a plurality of electrodes coupled to the volume of phase change material and the first conductor. A method including introducing, over a first conductor on a substrate, a plurality of electrodes coupled to the first conductor, introducing a phase change material over the plurality of electrodes and in electrical communication with the plurality of electrodes, and introducing a second conductor over the phase change material and coupled to the phase change material.
1. A method comprising:
forming a first conductor;
forming a second conductor over a substrate and electrically isolated from the first conductor;
forming a volume of phase change material substantially orthogonally to the first conductor; and
orienting said first and second conductors orthogonally over the substrate wherein a length of the second conductor is substantially equal to a length of the volume of phase change material.
2. The method of claim 1 including orienting the first and second conductors orthogonally to the substrate.
3. The method of claim 1 including disposing a third conductor over the substrate coupled to the first conductor.
4. A method comprising:
forming a first conductor;
forming a second conductor over a substrate and electrically isolated from the first conductor;
forming a volume of phase change material substantially orthogonal of the first conductor;
forming a third conductor over the substrate and coupled to the first conductor; and
forming a plurality of phase change material, PC n coupled individually to respective ones of the plurality of N conductors and electrodes coupled between each of a plurality of M conductors and the plurality of phase change material.
5. The method of claim 4 including forming the plurality of phase change material contiguous with a length of the plurality of N electrodes.