Nitrogenated carbon electrode for chalcogenide device and method of making same
View Patent ↗A nitrogenated carbon electrode suitable for use in a chalcogenide device and method of making the same are described. The electrode comprises nitrogenated carbon and is in electrical communication with a chalcogenide material. The nitrogenated carbon material may be produced by combining nitrogen and vaporized carbon in a physical vapor deposition process.
1. An electronic device, comprising:
a programmable resistance material; and
a first electrode in electrical communication with said programmable resistance material, said first electrode comprising carbon and nitrogen;
wherein the atomic concentration of carbon in said first electrode is greater than or equal to 60% and the atomic concentration of nitrogen in said first electrode is less than or equal to 40%.
2. The device of claim 1 , wherein the atomic concentration of carbon in said first electrode is greater than or equal to 70% and the atomic concentration of nitrogen in said first electrode is less than or equal to 30%.
3. The device of claim 1 , wherein the atomic concentration of carbon in said first electrode is greater than or equal to 80% and the atomic concentration of nitrogen in said first electrode is less than or equal to 20%.
4. The device of claim 1 , wherein the atomic concentration of carbon in said first electrode is greater than or equal to 90% and the atomic concentration of nitrogen in said first electrode is less than or equal to 10%.
5. The device of claim 1 , wherein the atomic concentration of carbon in said first electrode is greater than or equal to 95% and the atomic concentration of nitrogen in said first electrode is less than or equal to 5%.
6. The device of claim 1 , wherein the atomic concentration of carbon in said first electrode is between 90% and 95% and the atomic concentration of nitrogen in said electrode is between 5% and 10%.
7. The device of claim 1 , wherein said first electrode consists essentially of nitrogen and carbon.
8. The device of claim 1 , wherein said first electrode contacts said phase-change material.
9. The device of claim 1 , wherein said programmable resistance material comprises a chalcogenide material.
10. The device of claim 1 , wherein said programmable resistance material comprises a phase-change material.
11. The device of claim 1 , further comprising a second electrode in electrical communication with said programmable resistance material.
12. The device of claim 11 , wherein said second electrode comprises carbon and nitrogen.
13. The device of claim 12 , wherein the atomic concentration of carbon in said second electrode is greater than or equal to 50% and the atomic concentration of nitrogen in said second electrode is less than or equal to 50%.
14. An electronic device, comprising:
an S-type threshold switching material; and
a first electrode in electrical communication with said S-type threshold switching material, said first electrode comprising carbon and nitrogen;
wherein the atomic concentration of carbon in said first electrode is greater than or equal to 60% and the atomic concentration of nitrogen in said first electrode is less than or equal to 40%.
15. The device of claim 14 , wherein the atomic concentration of carbon in said first electrode is greater than or equal to 70% and the atomic concentration of nitrogen in said first electrode is less than or equal to 30%.
16. The device of claim 14 , wherein the atomic concentration of carbon in said first electrode is greater than or equal to 80% and the atomic concentration of nitrogen in said first electrode is less than or equal to 20%.
17. The device of claim 14 , wherein the atomic concentration of carbon in said first electrode is greater than or equal to 90% and the atomic concentration of nitrogen in said first electrode is less than or equal to 10%.
18. The device of claim 14 , wherein the atomic concentration of carbon in said first electrode is greater than or equal to 95% and the atomic concentration of nitrogen in said first electrode is less than or equal to 5%.
19. The device of claim 14 , wherein the atomic concentration of carbon in said first electrode is between 90% and 95% and the atomic concentration of nitrogen in said electrode is between 5% and 10%.
20. The device of claim 14 , wherein said first electrode consists essentially of nitrogen and carbon.
21. The device of claim 14 , wherein said first electrode contacts said S-type threshold switching material.
22. The device of claim 14 , wherein said S-type threshold switching material comprises a chalcogenide material.
23. The device of claim 14 , further comprising a second electrode in electrical communication with said programmable resistance material.
24. The device of claim 23 , wherein said second electrode comprises carbon and nitrogen.
25. The device of claim 24 , wherein the atomic concentration of carbon in said second electrode is greater than or equal to 50% and the atomic concentration of nitrogen in said second electrode is less than or equal to 50%.