Accessing a phase change memory
View Patent ↗A memory employs a low-level current source to access a phase change memory cell. The current source charges an access capacitor in order to store sufficient charge for an ensuing access. When a memory cell is accessed, charge stored on the capacitor is discharged through the phase change memory, supplying a current to the phase change memory cell that is sufficient for the intended access operation and greater than that provided directly by the current source.
1. An apparatus, comprising;
a phase change memory cell;
an access capacitor;
a source configured to charge the access capacitor;
switching means configured to switch current from the access capacitor to the phase change memory cell during a memory access, said memory access including a set operation or a read operation; and
a supplemental access capacitor configured for switching additional transient current into the phase change during said memory access, the supplemental access capacitor including at least one discrete capacitor.
2. The apparatus of claim 1 , wherein the source is a low-level current source.
3. The apparatus of claim 1 , wherein the source is a voltage source.
4. The apparatus of claim 1 , wherein the current source is a SET current source.
5. The apparatus of claim 1 , wherein the current source is a RESET current source.
6. The apparatus of claim 5 , further comprising a shunt device configured to quench the discharge from the access capacitor into the phase change cell to thereby provide a RESET current pulse.
7. The apparatus of claim 1 , wherein the access capacitance is line capacitance associated with a memory access line.
8. The apparatus of claim 1 , wherein the supplemental access capacitor includes at least two discrete capacitors combined in parallel.
9. The apparatus of claim 1 , wherein the supplemental access capacitor includes line capacitance from a separate unselected row line.
10. The apparatus of claim 1 , wherein the supplemental access capacitor includes line capacitance from a separate unselected column line.
11. The apparatus of claim 1 , wherein the supplemental access capacitor includes line capacitance from a separate block of memory.
12. An apparatus comprising:
logic circuitry; and
phase change memory including;
a phase change memory cell;
an access capacitor;
a current source configured to charge the access capacitor; and
switching means configured to switch current from the access capacitor to the phase change memory cell during a memory access, the logic circuitry configured to access the phase change memory cell, the memory access including a set operation or a read operation; and
a supplemental access capacitor configured for switching additional transient current into the phase change memory cell during said memory access, the supplemental access capacitor including at least one discrete capacitor.
13. The apparatus of claim 12 , wherein the logic circuitry is configured as a microprocessor.
14. The apparatus of claim 12 , further comprising a transceiver wherein the apparatus is configured as a cellular telephone.
15. The apparatus of claim 12 , further comprising a transceiver wherein the apparatus is configured as a radio frequency identification device.
16. The apparatus of claim 12 , wherein the apparatus is configured as a computer.
17. The apparatus of claim 12 , further comprising a voltage source configured to charge the access capacitor.