Programmable resistance memory element with multi-regioned contact

1. An electrically programmable memory element, comprising: a first dielectric layer having an opening; a conductive layer disposed on the sidewall surface of said opening; a second dielectric layer disposed over said conductive layer within said opening; and a programmable resistance material electrically coupled to a top surface of said conductive layer, wherein said conductive layer comprises at least a first portion having a first resistivity and a second portion having a second resistivity, said second resistivity being greater than said first resistivity, said second portion being proximate to said programmable resistance material, said first portion being distant from said programmable resistance material.

2. The memory element of claim 1 , wherein said second portion is adjacent to said top surface.

3. The memory element of claim 1 , wherein said second portion is adjacent to said programmable resistance material.

4. The memory element of claim 1 , wherein said first portion is doped differently from said second portion.

5. The memory element of claim 1 , wherein said conductive layer is formed over a portion of the bottom surface of said opening, said portion of said bottom surface being less than the entire bottom surface of said opening.

6. The memory element of claim 1 , wherein said conductive layer is cup-shaped.

7. The memory element of claim 1 , wherein said programmable resistance material is a phase-change material.

8. The memory element of claim 1 , wherein said programmable resistance material includes a chalcogen element.

9. A programmable resistance memory element, comprising: a substrate; a cup-shaped conductive layer electrically coupled to said substrate and having an open end facing away from said substrate; a dielectric material formed over the interior surface of said cup-shaped conductive layer; and a programmable resistance material electrically coupled to a top surface of said cup-shaped conductive layer through a second conductive layer wherein the resistivity of said second conductive layer is greater than the resistivity of said cup-shaped conductive layer.

10. The memory element of claim 9 , wherein said second conductive layer is doped differently from said cup-shaped conductive layer.

11. The memory element of claim 9 , wherein said programmable resistance material is a phase change material.

12. The memory element of claim 9 , wherein said programmable resistance material includes a chalcogen element.

13. An electrically programmable memory element, comprising: a programmable resistance material; and an electrical contact electrically coupled to said programmable resistance material, said electrical contact having at least a first portion with a first resistivity and a second portion with a second resistivity, said second resistivity being greater than said first resistivity, said second portion being proximate to said programmable resistance material, said first portion being distant from said programmable resistance material, said first portion being doped differently from said second portion.

14. The memory element of claim 13 , wherein said second portion is adjacent to said programmable resistance material.

15. The memory element of claim 13 , wherein said programmable resistance material is a phase-change material.

16. The memory element of claim 13 , wherein said programmable resistance material comprises a chalcogen element.