The invention relates to an X-Y address type solid-state image pickup device manufactured by a CMOS process, and has an object to provide an X-Y address type solid-state image pickup device which has a small element size and a wide opening ratio, and can reduce a kTC noise. A photodiode 10, a reset transistor 12, a source follower amplifier 14, and a horizontal selection transistor 16 are formed in each of pixel regions Pmn. A kTC noise reduction circuit 6 VR 1 for reducing a kTC noise and a CDS circuit 6 CL 1 are formed outside of the pixel regions Pmn. A differential amplifier is constituted by a first differential transistor 62 of the kTC noise reduction circuit 6 VR 1 and the source follower amplifier 14 in each of the pixel regions Pmn.
1. An image sensor in which a gate of source follower transistor is connected to one end of a photoelectric transducer, and a potential at the one end of the photoelectric transducer is read out as image data through the source follower transistor, the image sensor characterized in that
at a time of reset of the photoelectric transducer, a differential amplifier is constructed in which an inverting input terminal is the gate of the source follower transistor, and a noninverting input terminal is a gate of a first differential transistor to which a constant voltage is applied, and the one end of the photoelectric transducer is kept the constant voltage by feeding back an output of the differential amplifier to the inverting input terminal.
2. An image sensor according to claim 1 , characterized in that the output of the differential amplifier is fed back to the inverting input terminal through a reset transistor for resetting the photoelectric transducer.
3. An image sensor according to claim 2 , characterized in that the photoelectric transducer, the source follower transistor, and the reset transistor constitute a pixel, and a plurality of such pixels are arranged in a matrix form.
4. An image sensor according to claim 3 , characterized in that outputs of the plurality of the pixels are connected in common to one vertical selection line, and the image data of the respective pixels are read out through the vertical selection line.
5. An image sensor according to claim 4 , characterized in that the first differential transistor constituting the differential amplifier is provided for each of the vertical selection lines.
6. An image sensor according to claim 5 , characterized in that the first differential transistor is connected to the vertical selection line through a circuit switching transistor which is turned on in synchronization with an on operation of the reset transistor.
7. An image sensor according to claim 6 , characterized in that reset transistors of the plurality of the pixels are connected in common to one reset voltage supply line.
8. An image sensor according to claim 7 , characterized in that the differential amplifier includes a current mirror circuit, and the current mirror circuit is provided for each of a plurality of such reset voltage supply lines, and supplies the output of the differential amplifier to each of the plurality of the reset transistors connected in common to the reset voltage supply line.
9. An image sensor according to claim 8 , characterized in that the vertical selection line and the reset voltage supply line form a pair and are disposed in parallel with each other.