Semiconductor device, manufacturing method and apparatus for the same
View Patent ↗A highly reliable semiconductor chip electrode structure allowing control of interface reaction of bonding sections even in the case of using two- or three-element solder used conventionally is disclosed. A solder alloy making layer for preventing dissolving and diffusion of tin into tin-based lead free solder is thinly formed on a UBM layer. The tin-based solder is supplied in solder paste or solder ball form. A combined solder alloy layer composed of a combination of intermetallic compounds, one of tin and the solder alloy making layer, and one of tin and the UBM layer, is formed by heating and melting.
1. A semiconductor device having at least a solder bump formed of alloy solder on an under-bump layer including a first metal formed above a wiring layer, comprising:
an intermetallic compound including a metal that is the main component of the alloy solder and a second metal different from the metal that is the main component of the alloy solder, said second metal also being different from a metal in the adjoining under-bump layer, wherein the intermetallic compound is formed between the solder bump and the adjoining under-bump layer.
2. The semiconductor device according to claim 1 , wherein the metal that is the main component of the alloy solder is tin.
3. The semiconductor device according to claim 2 , wherein metal that is a second main component of the alloy solder after the tin is silver.
4. The semiconductor device of claim 2 , wherein copper is added to the alloy solder.
5. The semiconductor device of claim 3 , wherein copper is added to the alloy solder.
6. The semiconductor device according to claim 1 , wherein the second metal is a metal which is different from the first metal and is allowed to form an intermetallic compound with tin.
7. The semiconductor device according to claim 6 , wherein the second metal is copper.
8. The semiconductor device according to claim 1 , wherein the first metal included in the under-bump layer includes nickel.
9. The semiconductor device according to claim 8 , wherein the under-bump layer is a laminated film formed from one of nickel and nickel alloy with different film qualities.
10. The semiconductor device according to claim 9 , wherein the nickel alloy includes one selected from a group consisting of nickel/vanadium alloy, nickel/phosphorous alloy and nickel titanium alloy.
11. The semiconductor device according to claim 8 , wherein the under-bump layer is a laminated film formed from one of nickel and nickel alloy and one of copper and copper alloy.
12. The semiconductor device according to claim 11 , wherein the nickel alloy includes one selected from a group consisting of nickel/vanadium alloy, nickel/phosphorous alloy and nickel titanium alloy.
13. The semiconductor device according to claim 1 , wherein a contact layer is provided between the wiring layer and the under-bump layer.
14. The semiconductor device of claim 13 , wherein the contact layer includes one of titanium and titanium/tungsten alloy.
15. The semiconductor device according to claim 1 , wherein the alloy solder does not contain lead.
16. A semiconductor device having at least a solder bump formed of alloy solder on an under-bump layer including a first metal formed above a wiring layer, comprising:
an alloy layer composed of a combination of an intermetallic compound of a metal that is the main component of the alloy solder and a second metal different from the metal that is the main component of the alloy solder, said second metal also being different from a metal in the adjoining under-bump layer, and an intermetallic compound of the first metal included in the under-bump layer and the metal that is the main component of the alloy solder, wherein the alloy layer is formed between the solder bump and the adjoining under-bump layer.
17. The semiconductor device according to claim 16 , wherein the metal that is the main component of the alloy solder is tin.
18. The semiconductor device according to claim 17 , wherein metal that is a second main component of the alloy solder after the tin is silver.
19. The semiconductor device of claim 18 , wherein copper is added to the alloy solder.
20. The semiconductor device of claim 17 , wherein copper is added to the alloy solder.
21. The semiconductor device according to claim 16 , wherein the second metal is a metal which is different from the first metal and is allowed to form an intermetallic compound with tin.
22. The semiconductor device according to claim 21 , wherein the second metal is copper.
23. The semiconductor device according to claim 16 , wherein the first metal included in the under-bump layer includes nickel.
24. The semiconductor device according to claim 23 , wherein the under-bump layer is a laminated film formed from one of nickel and nickel alloy with different film qualities.
25. The semiconductor device according to claim 24 , wherein the nickel alloy includes one selected from a group consisting of nickel/vanadium alloy, nickel/phosphorous alloy and nickel titanium alloy.
26. The semiconductor device according to claim 23 , wherein the under-bump layer is a laminated film formed from one of nickel and nickel alloy and one of copper and copper alloy.
27. The semiconductor device according to claim 26 , wherein the nickel alloy includes one selected from a group consisting of nickel/vanadium alloy, nickel/phosphorous alloy and nickel titanium alloy.
28. The semiconductor device according to claim 16 , wherein a contact layer is provided between the wiring layer and the under-bump layer.
29. The semiconductor device of claim 28 , wherein the contact layer includes one of titanium and titanium/tungsten alloy.
30. The semiconductor device according to claim 16 , wherein the alloy solder does not contain lead.
31. A semiconductor device having at least a solder bump formed of alloy solder on an under-bump layer including a first metal formed above a wiring layer, comprising:
an intermetallic compound formed between the solder bump and the adjoining under-bump layer, wherein the intermetallic compound includes:
a second metal constituting a metal layer that is temporarily arranged on the under-bump layer, said second metal also being different from a metal in the adjoining under-bump layer, and is then dissolved into the alloy solder on formation of the solder bump; and
a metal that is the main component of the alloy solder.
32. The semiconductor device according to claim 31 , wherein the metal that is the main component of the alloy solder is tin.
33. The semiconductor device according to claim 32 , wherein metal that is a second main component of the alloy solder after the tin is silver.
34. The semiconductor device of claim 33 , wherein copper is added to the alloy solder.
35. The semiconductor device of claim 32 , wherein copper is added to the alloy solder.
36. The semiconductor device according to claim 31 , wherein the second metal is a metal which is different from the first metal and is allowed to form an intermetallic compound with tin.
37. The semiconductor device according to claim 36 , wherein the second metal is copper.
38. The semiconductor device according to claim 31 , wherein the first metal included in the under-bump layer includes nickel.
39. The semiconductor device according to claim 38 , wherein the under-bump layer is a laminated film formed from one of nickel and nickel alloy with different film qualities.
40. The semiconductor device according to claim 39 , wherein the nickel alloy includes one selected from a group consisting of nickel/vanadium alloy, nickel/phosphorous alloy and nickel titanium alloy.
41. The semiconductor device according to claim 38 , wherein the under-bump layer is a laminated film formed from one of nickel and nickel alloy and one of copper and copper alloy.
42. The semiconductor device according to claim 41 , wherein the nickel alloy includes one selected from a group consisting of nickel/vanadium alloy, nickel/phosphorous alloy and nickel titanium alloy.
43. The semiconductor device according to claim 31 , wherein a contact layer is provided between the wiring layer and the under-bump layer.
44. The semiconductor device of claim 43 , wherein the contact layer includes one of titanium and titanium/tungsten alloy.
45. The semiconductor device according to claim 31 , wherein the alloy solder does not contain lead.
46. A semiconductor device having at least a solder bump formed of alloy solder on an under-bump layer including a first metal formed above a wiring layer, comprising:
an alloy layer formed between the solder bump and the adjoining under-bump layer, wherein the alloy layer is composed of a combination of:
an intermetallic compound composed of a second metal constituting a metal layer that is temporarily arranged on the under-bump layer, said second metal also being different from a metal in the adjoining under-bump layer, and is then dissolved into the alloy solder on formation of the solder bump, and a metal that is the main component of the alloy solder; and
an intermetallic compound of the first metal included in the adjoining under-bump layer and the metal that is the main component of the alloy solder.
47. The semiconductor device according to claim 46 , wherein the metal that is the main component of the alloy solder is tin.
48. The semiconductor device according to claim 47 , wherein metal that is a second main component of the alloy solder after the tin is silver.
49. The semiconductor device of claim 48 , wherein copper is added to the alloy solder.
50. The semiconductor device of claim 47 , wherein copper is added to the alloy solder.
51. The semiconductor device according to claim 46 , wherein the second metal is a metal which is different from the first metal and is allowed to form an intermetallic compound with tin.
52. The semiconductor device according to claim 51 , wherein the second metal is copper.
53. The semiconductor device according to claim 46 , wherein the first metal included in the under-bump layer includes nickel.
54. The semiconductor device according to claim 53 , wherein the under-bump layer is a laminated film formed from one of nickel and nickel alloy with different film qualities.
55. The semiconductor device according to claim 54 , wherein the nickel alloy includes one selected from a group consisting of nickel/vanadium alloy, nickel/phosphorous alloy and nickel titanium alloy.
56. The semiconductor device according to claim 53 , wherein the under-bump layer is a laminated film formed from one of nickel and nickel alloy and one of copper and copper alloy.
57. The semiconductor device according to claim 56 , wherein the nickel alloy includes one selected from a group consisting of nickel/vanadium alloy, nickel/phosphorous alloy and nickel titanium alloy.
58. The semiconductor device according to claim 46 , wherein a contact layer is provided between the wiring layer and the under-bump layer.
59. The semiconductor device of claim 58 , wherein the contact layer includes one of titanium and titanium/tungsten alloy.
60. The semiconductor device according to claim 46 , wherein the alloy solder does not contain lead.
61. An electrode structure comprising:
an under-bump layer;
a solder bump comprising an alloy solder; and
an intermetallic compound, including a metal that is the main component of the alloy solder and a second metal different from the metal that is the main component of the alloy solder, said second metal also being different from a metal in the adjoining under-bump layer, formed between the adjoining under-bump layer and the solder bump.
62. A semiconductor device comprising:
a wiring layer;
an under-bump layer formed above the wiring layer;
a solder bump comprising an alloy solder; and
an alloy layer provided between the solder bump and the adjoining under-bump layer, wherein the alloy layer comprises:
the main component of the alloy solder; and
a metal which is different from the main component of the alloy solder and is also different from a metal included in the adjoining under-bump layer.
63. The semiconductor device according to claim 62 , wherein the alloy layer comprises an alloy of:
the main component of the alloy solder; and
the metal which is different from the main component of the alloy solder and is also different from the metal included in the adjoining under-bump layer.
64. The semiconductor device according claim 63 , wherein the alloy layer comprises an alloy of:
the main component of the alloy solder; and
the metal included in the adjoining under-bump layer.
65. The semiconductor device according to claim 62 , wherein the alloy layer comprises an alloy of:
the main component of the alloy solder; and
the metal included in the adjoining under-bump layer.
66. An electrode structure comprising:
an under-bump layer;
a solder bump comprising an alloy solder; and
an alloy layer provided between the solder bump and the adjoining under-bump layer, wherein the alloy layer comprises:
at least the main component of the alloy solder; and
a metal which is different from the main component of the alloy solder and is also different from a metal included in the adjoining under-bump layer.
67. The electrode structure according to claim 66 , wherein the alloy layer comprises an alloy of:
the main component of the alloy solder; and
the metal which is different from the main component of the alloy solder and is also different from the metal included in the adjoining under-bump layer.
68. The electrode structure according to claim 67 , wherein the alloy layer comprises an alloy of:
the main component of the alloy solder; and
the metal included in the adjoining under-bump layer.
69. The electrode structure according to claim 66 , wherein the alloy layer comprises an alloy of:
the main component of the alloy solder; and
the metal included in the adjoining under-bump layer.