Method for forming a MR reader with reduced shield topography and low parasitic resistance
View Patent ↗A magnetoresistive reader having a sensor, current contacts with low parasitic resistance and a top shield with substantially planar topology is fabricated by first defining a stripe height back edge of the sensor. Next, a reader width of the sensor is defined. The current contacts are deposited to a thickness such that a top surface of the current contacts is substantially level with a top surface of the sensor. The top shield is deposited over the sensor and the current contacts. Defining the stripe height back edge prior to the reader width results in current contacts with low parasitic resistance and inhibits the formation of magnetic domains in the top shield.
1. A method of forming a magnetoresistive reader with planar top shield topography and low parasitic resistance, the method comprising:
defining a stripe height back edge of a magnetoresistive sensor of the magnetoresistive reader, wherein defining the stripe height back edge of the magnetoresistive sensor comprises:
depositing a plurality of magnetoresistive sensor layers;
selectively patterning a first photoresist layer on the magnetoresistive sensor layers, the first photoresist layer leaving exposed a first region of the magnetoresistive sensor layers; and
removing the exposed first region of the magnetoresistive sensor layers; and
subsequently defining a reader width of the magnetoresistive sensor, wherein defining the reader width of the magnetoresistive sensor comprises:
selectively patterning a second photoresist layer on the magnetoresistive sensor layers, the second photoresist layer leaving exposed a second region of the magnetoresistive sensor layers; and
removing the exposed second region of the magnetoresistive sensor layers.
2. The method of claim 1 and further comprising:
defining a stripe height front edge of the magnetoresistive sensor layers.
3. The method of claim 2 wherein defining the stripe height front edge of the magnetoresistive sensor comprises:
lapping an air bearing surface of the magnetoresistive sensor layers.
4. A method of forming a magnetoresistive reader with planar shield topography and low parasitic resistance, the method comprising:
depositing a stack of magnetoresistive sensor layers;
selectively patterning a first photoresist layer on the stack of magnetoresistive sensor layers, the first photoresist layer serving to define a stripe height back edge of the magnetoresistive sensor by leaving exposed a first region of the stack of magnetoresistive sensor layers;
removing the exposed first region of the stack of magnetoresistive sensor layers;
removing the first photoresist layer;
selectively patterning a second photoresist layer on the stack of magnetoresistive sensor layers after removal of the first photoresist layer, the second photoresist layer serving to define a reader width of the magnetoresistive sensor by leaving exposed a second region of the stack of magnetoresistive sensor layers;
removing the exposed second region of the stack of magnetoresistive sensor layers;
depositing current contacts such that the current contacts are in electrical contact with opposite edges of the stack of magnetoresistive sensor layers;
removing the second photoresist layer; and
lapping an air bearing surface of the magnetoresistive sensor to define a stripe height front edge of the magnetoresistive sensor.
5. The method of claim 4 and further comprising:
backfilling an insulating material into the removed first region prior to the removal of the first photoresist layer.
6. The method of claim 5 wherein the insulating material is Al 2 O 3 .
7. The method of claim 5 wherein the insulating material is deposited to a thickness similar to a thickness of the stack of magnetoresistive sensor layers, such that the insulating layer survives the step of removing the exposed second region.
8. The method of claim 4 wherein a top surface of the current contacts is substantially level with a top surface of the stack of magnetoresistive sensor layers.
9. The method of claim 4 and further comprising:
depositing a top gap layer on the current contacts and on the stack of magnetoresistive sensor layers; and
depositing a top shield layer on the top gap layer.
10. The method of claim 9 wherein the top shield layer is substantially planar.
11. The method of claim 4 wherein a pedestal, a permanent magnet seed, and a permanent magnet are sequentially deposited beneath the current contacts and adjacent to the stack of magnetoresistive sensor layers.
12. The method of claim 4 wherein a bottom shield layer and a bottom gap layer are sequentially deposited prior to the deposit of the stack of magnetoresistive sensor layers.
13. The method of claim 12 wherein the bottom shield layer and the bottom gap layer remain when exposed first region of the stack of magnetoresistive sensor layers is removed.
14. A method of forming a magnetoresistive reader with planar top shield topography and low parasitic resistance, the method comprising:
defining a stripe height back edge of a magnetoresistive sensor of the magnetoresistive reader, wherein defining the stripe height back edge of the magnetoresistive sensor of the magnetoresistive reader comprises:
depositing a stack of magnetoresistive sensor layers;
selectively patterning a first photoresist layer on the stack of magnetoresistive sensor layers, the first photoresist layer serving to define a stripe height back edge of the magnetoresistive sensor by leaving exposed a first region of the stack of magnetoresistive sensor layers;
removing the exposed first region of the stack of magnetoresistive sensor layers; and
removing the first photoresist layer; and
subsequently defining a physical reader width of the magnetoresistive sensor, wherein defining the physical reader width of the magnetoresistive sensor comprises:
selectively patterning a second photoresist layer on the stack of magnetoresistive sensor layers, the second photoresist layer serving to define a reader width of the magnetoresistive sensor by leaving exposed a second region of the stack of magnetoresistive sensor layers; and
removing the exposed second region of the stack of magnetoresistive sensor layers.
15. The method of claim 14 and further comprising:
depositing current contacts such that the current contacts are in electrical contact with opposite edges of the stack of magnetoresistive sensor layers;
removing the second photoresist layer; and
lapping an air bearing surface of the magnetoresistive sensor to define a stripe height front edge of the magnetoresistive sensor.
16. The method of claim 15 and further comprising:
backfilling an insulating material into the removed first region prior to the removal of the first photoresist layer.
17. The method of claim 16 wherein the insulating material is Al 2 O 3 .
18. The method of claim 16 wherein the insulating material is deposited to a thickness similar to a thickness of the stack of magnetoresistive sensor layers, such that the insulating layer survives the step of removing the exposed second region.
19. The method of claim 15 wherein a top surface of the current contacts is substantially level with a top surface of the stack of magnetoresistive sensor layers.
20. The method of claim 15 and further comprising:
depositing a top gap layer on the current contacts and on the stack of magnetoresistive sensor layers; and
depositing a top shield layer on the top gap layer.
21. The method of claim 20 wherein the top shield layer is substantially planar.
22. The method of claim 15 wherein a pedestal, a permanent magnet seed, and a permanent magnet are sequentially deposited beneath the current contacts and adjacent to the stack of magnetoresistive sensor layers.
23. The method of claim 15 wherein a bottom shield layer and a bottom gap layer are sequentially deposited prior to the deposit of the stack of magnetoresistive sensor layers.
24. The method of claim 23 wherein the bottom shield layer and the bottom gap layer remain when exposed first region of the stack of magnetoresistive sensor layers is removed.