Patent Assignment
Reel/Frame 026010/0350
SECURITY AGREEMENT
Recorded: 2011-03-24
Received: 2011-03-24
Pages: 286
Assignor
SEAGATE TECHNOLOGY LLC
Executed: 2011-01-18
Assignee
THE BANK OF NOVA SCOTIA, AS ADMINISTRATIVE AGENT
GWS LOAN OPERATIONS, 720 KING STREET WEST, 2ND FLOOR, TORONTO, CAX, M5V 2T3, CANADA
Covered Applications
(100)
DEVICES AND METHODS FOR PROTECTING LASER DIODES FROM ELECTROSTATIC DISCHARGE
App. No. 12/970,068
→
ADJUSTING HEATER CURRENT TO REDUCE READ TRANSDUCER ASYMMETRY
App. No. 12/985,952
→
REDUCING ERRORS RESULTING FROM WIDTH VARIABILITY OF STORAGE MEDIA WRITE TRACKS
App. No. 12/985,946
→
Concurrent Actions for Data Storage
App. No. 12/985,860
→
MAGNETIC MEMORY CELL CONSTRUCTION
App. No. 12/977,630
→
INTEGRATED HEAT ASSISTED MAGNETIC RECORDING HEAD WITH EXTENDED CAVITY VERTICAL CAVITY SURFACE EMITTING LASER DIODE
App. No. 12/975,438
→
HEAT-SINKS FOR OPTICAL NEAR-FIELD TRANSDUCERS
App. No. 12/976,559
→
MAGNETIC MEMORY WITH SEPARATE READ AND WRITE PATHS
App. No. 12/974,699
→
MEMORY WITH SEPARATE READ AND WRITE PATHS
App. No. 12/974,679
→
NON-VOLATILE MEMORY CELL WITH LATERAL PINNING
App. No. 12/973,536
→
TUNNELING TRANSISTORS
App. No. 12/971,393
→
MAGNETIC STRUCTURE FREE LAYER STABILIZATION
App. No. 12/972,182
→
Current Perpendicular-to-Plan Reader with Reduced Shield-to-Shield Spacing
App. No. 61/423,441
→
BIPOLAR POSITION ERROR BURSTS WITH UNIPOLAR SERVO FIELDS
App. No. 12/969,305
→
SPATIAL CORRELATION OF REFERENCE CELLS IN RESISTIVE MEMORY ARRAY
App. No. 12/968,438
→
SPIN-TRANSFER TORQUE MEMORY SELF-REFERENCE READ METHOD
App. No. 12/968,441
→
WRITE CURRENT COMPENSATION USING WORD LINE BOOSTING CIRCUITRY
App. No. 12/967,743
→
WRITE CURRENT COMPENSATION USING WORD LINE BOOSTING CIRCUITRY
App. No. 12/967,802
→
NOVEL USE OF NVC AND MC TO MITIGATE THE PERFORMANCE LIMITATIONS OF 5XXE
App. No. 61/422,544
→
HDD WITH HOST POWER-LOSS DATA SCRAM MECHANISM
App. No. 61/422,549
→
DOUBLE SHELL WRITERS
App. No. 12/966,453
→
MEMORY STACKS MANAGEMENT
App. No. 12/963,933
→
MAGNETORESISTIVE DEVICE HAVING SPECULAR SIDEWALL LAYERS
App. No. 12/963,380
→
LOW-COUPLING OXIDE MEDIA (LCOM)
App. No. 12/963,244
→
MEMORY CELL WITH ENHANCED READ AND WRITE SENSE MARGINS
App. No. 12/961,240
→
MAGNETIC STORAGE ELEMENT RESPONSIVE TO SPIN POLARIZED CURRENT
App. No. 12/958,106
→
META-MATERIAL SLAB WITH ANISOTROPIC PERMITTIVITY
App. No. 12/958,227
→
RECONFIGURABLE MAGNETIC LOGIC DEVICE USING SPIN TORQUE
App. No. 12/956,487
→
METHOD FOR SELF-ASSEMBLY OF BLOCK COPOLYMER COMPOSITIONS
App. No. 12/957,196
→
Magnetic Element with Improved Stability And Including At Least One Antiferromagnetic Tab
App. No. 12/956,752
→
Magnetic Memory Cell With Multi-Level Cell (MLC) Data Storage Capability
App. No. 12/955,612
→
CODED PULSE DATA TRANSMISSION USING A LOOK-UP TABLE
App. No. 12/955,410
→
SPUTTERING SHIELD
App. No. 12/955,851
→
MEMORY SANITATION USING BIT-INVERTED DATA
App. No. 12/955,579
→
NON-VOLATILE PROGRAMMABLE LOGIC GATES AND ADDERS
App. No. 12/953,544
→
APPARATUS FOR INCREASING DATA RATES IN A MAGNETIC FIELD
App. No. 61/416,852
→
FLUX PROGRAMMED MULTI-BIT MAGNETIC MEMORY
App. No. 12/953,205
→
MAGNETIC WRITE DEVICE WITH A CLADDED WRITE ASSIST ELEMENT
App. No. 12/950,642
→
Using a Nearby Cell to Provide Field Assisted Switching in a Magnetic Memory Array
App. No. 12/950,673
→
MAGNETIC RANDOM ACCESS MEMORY WITH DUAL SPIN TORQUE REFERENCE LAYERS
App. No. 12/949,871
→
STATIC SOURCE PLANE IN STRAM
App. No. 12/948,838
→
MRAM DIODE ARRAY AND ACCESS METHOD
App. No. 12/948,824
→
METHODS OF FORMING NON-VOLATILE MEMORY
App. No. 12/948,831
→
Head-to-Media Spacing Sensing and Contact Detection Using Resistance Temperature Sensor Assemblies
App. No. 61/414,733
→
Head-to-Media Spacing Sensing and Contact Detection Using Differential Resistance Temperature Sensor Assemblies
App. No. 61/414,734
→
METHOD OF SWITCHING OUT-OF-PLANE MAGNETIC TUNNEL JUNCTION CELLS
App. No. 12/946,900
→
MEMORY CELL WITH PHONON-BLOCKING INSULATING LAYER
App. No. 12/947,516
→
MEDIA PLAYER
App. No. 29/379,132
→
MEMORY CELL WITH PROPORTIONAL CURRENT SELF-REFERENCE SENSING
App. No. 12/946,582
→
INTERFACE FOR MEDIA SHARING DEVICE
App. No. 29/379,128
→
Estimating Wear of Non-Volatile, Solid State Memory
App. No. 12/945,496
→
VARIABLE RESISTIVE MEMORY PUNCHTHROUGH ACCESS METHOD
App. No. 12/944,790
→
MULTI-BIT MAGNETIC MEMORY WITH INDEPENDENTLY PROGRAMMABLE FREE LAYER DOMAINS
App. No. 12/944,523
→
MAGNETIC STACK HAVING ASSIST LAYER
App. No. 12/943,976
→
MAGNETIC TUNNEL JUNCTION WITH ELECTRONICALLY REFLECTIVE INSULATIVE SPACER
App. No. 12/943,979
→
ADAPTABLE STORAGE CARTRIDGE SYSTEM
App. No. 12/942,068
→
Method to Improve Corrosion Performance of Exchange Coupled Granular Perpendicular Media
App. No. 12/942,730
→
DETECTION SYSTEM USING HEATING ELEMENT TEMPERATURE OSCILLATIONS
App. No. 12/941,461
→
SKEW COMPENSATION SIGNAL
App. No. 12/941,466
→
FIELD ASSISTED SWITCHING OF A MAGNETIC MEMORY ELEMENT
App. No. 12/939,751
→
MAGNETIC MEMORY ELEMENT WITH MULTI-DOMAIN STORAGE LAYER
App. No. 12/938,424
→
Multilevel data structure
App. No. 12/938,233
→
MAGNETIC TUNNEL JUNCTION CELLS HAVING PERPENDICULAR ANISOTROPY AND ENHANCEMENT LAYER
App. No. 12/916,738
→
STORAGE DEVICE CACHE
App. No. 12/916,109
→
SHIELD WITH CONTINUOUSLY CONCAVE INNER SIDEWALL
App. No. 12/915,267
→
PROGRAMMABLE METALLIZATION CELLS AND METHODS OF FORMING THE SAME
App. No. 12/915,113
→
METHOD AND SYSTEM FOR IMPRINT LITHOGRAPHY
App. No. 12/915,583
→
MAGNETIC LAYER
App. No. 12/916,302
→
Causing Related Data to be Written Together to Non-Volatile, Solid State Memory
App. No. 12/913,408
→
Assessing Connection Joint Coverage Between a Device and a Printed Circuit Board
App. No. 12/913,122
→
STORING CORRESPONDING DATA UNITS IN A COMMON STORAGE UNIT
App. No. 61/406,470
→
COMPACT MICROACTUATOR HEAD ASSEMBLY
App. No. 12/910,196
→
ELECTROSTATIC DISCHARGE APPARATUS FOR HUB AND SPINDLE ASSEMBLIES
App. No. 12/910,738
→
SLIDER FOR A HEAD GIMBAL ASSEMBLY WITH AN INVERTED DIMPLE
App. No. 12/910,077
→
COMMUNICATION DEVICE AND STORAGE DEVICE PROTOCOL
App. No. 12/909,558
→
NON-REVOLVING NIP PLATING RACK WITH LAMINAR FLOW
App. No. 61/405,116
→
WAFER PROCESS METHODS FOR INTEGRATED LIGHT DELIVERY FOR HAMR RECORDING
App. No. 61/394,952
→
PREDICTIVE READ CHANNEL CONFIGURATION
App. No. 12/908,295
→
DISC VAPOR LUBRICATION
App. No. 12/905,991
→
VARIABLE RESISTIVE MEMORY PUNCHTHROUGH ACCESS METHOD
App. No. 12/904,288
→
EMBEDDED TRACK INFORMATION FOR PATTERNED MEDIA
App. No. 12/904,910
→
DEVICE AND METHOD FOR ERROR DETECTION
App. No. 12/904,912
→
MAGNETIC MEMORY WITH POROUS NON-CONDUCTIVE CURRENT CONFINEMENT LAYER
App. No. 12/904,254
→
RESISTIVE SENSE MEMORY ARRAY WITH PARTIAL BLOCK UPDATE CAPABILITY
App. No. 12/904,653
→
NAND BASED RESISTIVE SENSE MEMORY CELL ARCHITECTURE
App. No. 12/903,716
→
SPIN-TRANSFER TORQUE MEMORY SELF-REFERENCE READ AND WRITE ASSIST METHODS
App. No. 12/903,305
→
MAGNETORESISTIVE MEMORY ELEMENTS WITH SEPARATE READ AND WRITE CURRENT PATHS
App. No. 12/903,297
→
POLARITY DEPENDENT SWITCH FOR RESISTIVE SENSE MEMORY
App. No. 12/903,301
→
DATA STORAGE USING READ-MASK-WRITE OPERATION
App. No. 12/903,023
→
NON-VOLATILE MEMORY CELL WITH RESISTIVE SENSE ELEMENT BLOCK ERASE AND UNI-DIRECTIONAL WRITE
App. No. 12/903,011
→
RESTRAINING MOTOR SHAFT PLAY
App. No. 12/902,035
→
MULTI-BIT MEMORY WITH SELECTABLE MAGNETIC LAYER
App. No. 12/900,314
→
WRITE VERIFY METHOD FOR RESISTIVE RANDOM ACCESS MEMORY
App. No. 12/899,646
→
MAGNETIC TUNNEL JUNCTION WITH COMPENSATION ELEMENT
App. No. 12/899,645
→
STUCK-AT DEFECT CONDITION REPAIR FOR A NON-VOLATILE MEMORY CELL
App. No. 12/900,303
→
CHROMIUM NITRIDE FILM LAYER
App. No. 12/899,040
→
STAGGERED MAGNETIC TUNNEL JUNCTION
App. No. 12/898,831
→
MAGNETORESISTIVE DEVICE WITH ENHANCED PINNED LAYER
App. No. 12/898,147
→
PLANARIZATION METHOD FOR MEDIA
App. No. 12/895,630
→
PATTERNED TEMPLATE WITH 1XN NUCLEATION SITE TO GRAIN GROWTH FOR UNIFORM GRAIN SIZE RECORDING MEDIA
App. No. 12/895,564
→