Tunneling transistors
View Patent ↗A transistor including a source; a drain; a gate region, the gate region including a gate; an island; and a gate oxide, wherein the gate oxide is positioned between the gate and the island; and the gate and island are coactively coupled to each other; and a source barrier and a drain barrier, wherein the source barrier separates the source from the gate region and the drain barrier separates the drain from the gate region.
1. A transistor comprising:
a source;
a drain;
a gate region, the gate region comprising:
a gate;
an island; and
a gate oxide,
wherein the gate oxide is positioned between the gate and the island; and the gate and island are electrically coactively coupled to each other; and
a source barrier and a drain barrier,
wherein the source barrier separates the source from the gate region and the drain barrier separates the drain from the gate region, and wherein the source barrier and drain barrier are thinner proximate the island than they are proximate the gate.
2. The transistor according to claim 1 , wherein the source barrier and drain barrier have a variable thickness.
3. The transistor according to claim 1 , wherein the source and drain comprise n- or p-type doped silicon.
4. The transistor according to claim 1 , wherein the gate comprises a metal, a metal oxide or poly-silicon.
5. The transistor according to claim 1 , wherein the gate oxide comprises SiO 2 , or a material having a high dielectric constant.
6. The transistor according to claim 5 , wherein the gate oxide comprises ZrO 2 , Y 2 O 3 , HfO 2 , SiO x N y , or solid solutions thereof.
7. The transistor according to claim 1 , wherein the source barrier and drain barrier independently comprise SiO 2 , or a material having a high dielectric constant.
8. The transistor according to claim 7 , wherein the source barrier and drain barrier independently comprise ZrO 2 , Y 2 O 3 , HfO 2 , SiO x N y , or solid solutions thereof.
9. The transistor according to claim 1 , wherein the island comprises n- or p-type doped silicon or a semiconductor oxide.
10. The transistor according to claim 9 , wherein the island comprises SnO, Sn 2 O 3 , 1 n 2 O 3 , or solid solutions thereof
11. The transistor according to claim 1 , wherein the source, source barrier, island, drain barrier, and drain are stacked on a substrate.
12. The transistor according to claim 11 , wherein the source barrier is thicker than the drain barrier.
13. The transistor according to claim 11 , wherein at least the island of the gate region contacts both the source barrier and the drain barrier.
14. The transistor according to claim 13 , wherein the gate contacts only the gate oxide.
15. A memory array comprising:
a first memory array layer that comprises a plurality of memory units, each memory unit comprising a transistor electrically coupled to a memory cell; and
a second memory array layer that comprises a plurality of memory units, each memory unit comprising a transistor electrically coupled to a memory cell,
wherein the transistors comprise:
a source;
a drain;
a gate region, the gate region comprising:
a gate;
an island; and
a gate oxide, wherein the gate oxide is positioned between the gate and the island; and the gate and island are electrically coactively coupled to each other; and
a source barrier and a drain barrier,
wherein the source barrier separates the source from the gate region and the drain barrier separates the drain from the gate region; and
wherein the source barrier and drain barrier are thinner proximate the island than they are proximate the gate.
16. The memory array according to claim 15 , wherein the first memory array layer and the second memory array layer includes a plurality of rows and columns of memory units.
17. The memory array according to claim 15 further comprising three or more memory array layers stacked sequentially to form the memory array.