Spatial correlation of reference cells in resistive memory array
View Patent ↗The present disclosure relates to methods of selectively placing a reference column or reference row in a memory array. The method includes measuring a resistance state resistance value for a plurality of variable resistive memory cells within a memory array and mapping a location of each measured variable resistive memory cell to form a map of the resistance state resistance values for a plurality of variable resistive memory cells within a memory array. Then a column or row is selected to be a reference column or reference row based on the map of the resistance state resistance value for a plurality of variable resistive memory cells within a memory array, to minimize read operation errors, and forming a variable resistive memory cell memory array.
1. A method, comprising:
measuring a resistance state resistance value for a plurality of variable resistive memory cells within a memory array; and
selecting a column or row in the memory array to be a reference column or reference row based on the measured resistance state resistance values within the memory array, to minimize read operation errors, and forming a variable resistive memory cell memory array.
2. A method according to claim 1 , wherein the resistance state resistance value comprises a high resistance state resistance value.
3. A method according to claim 1 , wherein the resistance state resistance value comprises a low resistance state resistance value.
4. A method according to claim 1 , wherein the resistance state resistance value comprises a low resistance state resistance value and a high resistance state resistance value.
5. A method according to claim 1 , wherein the selecting step comprises selecting two or more columns or rows in a memory array to be reference columns or reference rows.
6. A method according to claim 1 , further comprising forming subsequent variable resistive memory cell memory arrays having the reference column or row placed in the memory array at the selected column or row location in the variable resistive memory cell memory array.
7. A method according to claim 1 , wherein the selecting step comprises selecting two or more columns or rows in the memory array to be reference columns or reference rows based on the measured resistance state resistance values within the memory array.
8. A method according to claim 1 , wherein the selecting step comprises selecting at least one column and at least one row in the memory array to be a reference column and a reference row based on the measured resistance state resistance values within the memory array.
9. A method according to claim 1 , wherein the selecting step comprises performing a spatial correlation analysis of the measured resistance state resistance values within the memory array.
10. A method according to claim 9 , wherein the spatial correlation analysis comprises determining relative distance, direction and resistance value of each measured variable resistive memory in the map of the resistance state resistance values.
11. A method according to claim 1 , wherein the selecting step increases a sensing margin of the memory array.
12. A method, comprising:
measuring a high resistance state resistance value and a low resistance state resistance value for a plurality of magnetic tunnel junction data cells within a memory array; and
selecting a column or row in the memory array to be a reference column or reference row based on the measured resistance state resistance values within the memory array, to increase a sense margin of the memory array and minimize read operation errors, and forming a magnetic tunnel junction data cell memory array.
13. A method according to claim 12 , wherein the selecting step comprises selecting two or more columns or rows in a memory array to be reference columns or reference rows.
14. A method according to claim 12 , further comprising forming subsequent magnetic tunnel junction data cell memory arrays having the reference column or row placed in the memory array at the selected column or row location in the magnetic tunnel junction data cell memory array.
15. A method according to claim 12 , wherein the selecting step comprises selecting two or more columns or rows in the memory array to be reference columns or reference rows based on the measured resistance state resistance values within the memory array.
16. A method according to claim 12 , wherein the selecting step comprises selecting at least one column and at least one row in the memory array to be a reference column and a reference row based on the measured resistance state resistance values within the memory array.
17. A method according to claim 12 , wherein the selecting step comprises performing a spatial correlation analysis of the measured resistance state resistance values within the memory array.
18. A method of placing a reference column or reference row in a memory array, comprising the steps of:
measuring a resistance value for a plurality of spin-transfer torque memory cells within a memory array;
performing statistical analysis on the measured resistance values to determine a spatial correlation of the measured resistance values; and
selecting a column or row in the memory array to be a reference column or reference row based on the statistical analysis of the measured resistance state resistance value within the memory array, to increase a sense margin of the memory array and minimize read operation errors, and forming a spin-transfer torque memory array.
19. A method according to claim 18 , wherein the selecting step comprises selecting two or more columns or rows in a memory array to be reference columns or reference rows.
20. A method according to claim 18 , further comprising forming subsequent spin-transfer torque memory cell memory arrays having the reference column or row placed in the memory array at the selected column or row location in the spin-transfer torque memory array.