Chromium nitride film layer
View Patent ↗In a recording medium, a CrN film layer comprising a B1 phase crystal structure.
1. A recording medium comprising:
a substrate;
a magnetic layer;
an underlayer comprising a CrN film having a B1 phase crystal structure and a (200) texture; and
a seedlayer between the substrate and the underlayer, the seedlayer having a (200) texture.
2. The recording medium of claim 1 and wherein the seedlayer comprises MgO.
3. The recording medium of claim 1 and wherein the CrN film is formed by sputter depositing chromium in the presence of nitrogen or nitrogen containing compounds.
4. The recording medium of claim 1 and wherein the thickness of the underlayer is less than about 50 nm.
5. The recording medium of claim 1 and wherein the CrN layer has a texture distribution angle of less than about 5° .
6. The recording medium of claim 1 and wherein the magnetic layer is a L1 0 phase magnetic layer.
7. The recording medium of claim 1 and wherein the magnetic layer has a (001) texture.
8. The recording medium of claim 1 and wherein the magnetic layer comprises FePt.
9. The recording medium of claim 1 and wherein the magnetic layer comprises CoPt.
10. The recording medium of claim 1 and wherein the substrate is glass, silicon, or an aluminum alloy coated with NiP.
11. The recording medium of claim 1 and further comprising a second seedlayer, between the CrN underlayer and the magnetic layer.
12. The recording medium of claim 1 and wherein the thickness of the seedlayer is less than about 5 nm.