Staggered magnetic tunnel junction

1. A magnetic tunnel junction, comprising:

a free magnetic layer extending in a lateral direction between a first end portion and an opposing second end portion;

a tunneling barrier disposed between a reference magnetic layer and the first end portion and forming a magnetic tunnel junction;

wherein current flows through the free magnetic layer in the lateral direction to switch the magnetic tunnel junction between a high resistance state and a low resistance state.

2. A magnetic tunnel junction according to claim 1 , wherein the reference magnetic layer and the free magnetic layer form a first overlap portion where the free magnetic layer overlaps the reference magnetic layer in an out-of-plane direction and the overlap portion is in a range from 1 to 35% of a total lateral distance of the free magnetic layer.

3. A magnetic tunnel junction according to claim 2 , wherein overlap portion is in a range from 5 to 25% of a total lateral distance of the free magnetic layer.

4. A magnetic tunnel junction cell according to claim 1 , further comprising a second tunneling barrier separating a second reference magnetic layer from the free magnetic layer.

5. A magnetic tunnel junction according to claim 4 , wherein the second reference magnetic layer has a magnetization orientation opposing a magnetization orientation of the reference magnetic layer.

6. A magnetic tunnel junction according to claim 4 , wherein the second reference magnetic layer and the free magnetic layer form the second overlap portion where the free magnetic layer overlaps the second reference magnetic layer in an out-of-plane direction.

7. A magnetic tunnel junction according to claim 6 , wherein second overlap portion is in a range from 5 to 25% of a total lateral distance of the free magnetic layer.

8. A magnetic tunnel junction according to claim 1 , wherein the current is a spin polarized current.

9. A magnetic tunnel junction, comprising:

a first electrode;

a reference magnetic layer in electrical connection with the first electrode;

a free magnetic layer overlapping only a portion of the reference magnetic layer in an out-of-plane direction, the free magnetic layer having a thickness extending in a out-of-plane direction and a length extending in a lateral in-plane direction;

a tunneling barrier disposed between the portion of the reference magnetic layer and the free magnetic layer; and

a second electrode in electrical connection with the free magnetic layer and overlapping only a portion of the free magnetic layer in an out-of-plane direction.

10. A magnetic tunnel junction according to claim 9 , wherein the reference magnetic layer and the free magnetic layer form a first overlap portion where the free magnetic layer overlaps the reference magnetic layer in an out-of-plane direction and the second electrode and the free magnetic layer form a second overlap portion where the free magnetic layer overlaps the second electrode in an out-of-plane direction and the first overlap portion and the second overlap portion are mutually exclusive.

11. A magnetic tunnel junction according to claim 10 , wherein the first overlap portion is in a range from 1 to 35% of the length of the free magnetic layer.

12. A magnetic tunnel junction according to claim 10 , wherein the second overlap portion is in a range from 1 to 35% of the length of the free magnetic layer.

13. A magnetic tunnel junction according to claim 10 , wherein first overlap portion is in a range from 5 to 25% of the length of the free magnetic layer and the second overlap portion is in a range from 5 to 25% of the length of the free magnetic layer.

14. A magnetic tunnel junction according to claim 9 , further comprising a second tunneling barrier separating a second reference magnetic layer from the free magnetic layer, the second reference magnetic layer separating the second electrode from the second tunneling barrier.

15. A magnetic tunnel junction according to claim 14 , wherein the second reference magnetic layer has a magnetization orientation opposing a magnetization orientation of the reference magnetic layer.

16. A magnetic tunnel junction according to claim 14 , wherein the second reference magnetic layer and the free magnetic layer form the second overlap portion where the free magnetic layer overlaps the second reference magnetic layer in an out-of-plane direction.

17. A magnetic tunnel junction, comprising:

a first electrode;

a first reference magnetic layer in electrical connection with the first electrode;

a free magnetic layer overlapping only a portion of the first reference magnetic layer and having a length extending in a lateral direction;

a first tunneling barrier disposed between the first reference magnetic layer and the free magnetic layer;

a second tunneling barrier disposed between the free magnetic layer and a second reference magnetic layer, the second reference magnetic layer overlaps only a portion of the free magnetic layer; and

a second electrode in electrical connection with the reference magnetic layer such that current flows from the first electrode to the second electrode and passes through the free magnetic layer in the lateral direction to switch the magnetic tunnel junction between a high resistance state and a low resistance state.

18. A magnetic tunnel junction according to claim 17 , wherein the first reference magnetic layer and the free magnetic layer form a first overlap portion where the free magnetic layer overlaps the first reference magnetic layer in an out-of-plane direction and the second reference magnetic layer and the free magnetic layer form a second overlap portion where the free magnetic layer overlaps the second reference magnetic layer in an out-of-plane direction and the first overlap portion and the second overlap portion are mutually exclusive.

19. A magnetic tunnel junction according to claim 18 , wherein the first overlap portion is in a range from 1 to 35% of the length of the free magnetic layer and the second overlap portion is in a range from 1 to 35% of the length of the free magnetic layer.

20. A magnetic tunnel junction according to claim 18 , wherein first overlap portion is in a range from 5 to 25% of the length of the free magnetic layer and the second overlap portion is in a range from 5 to 25% of the length of the free magnetic layer.