METHOD AND SYSTEM FOR IMPRINT LITHOGRAPHY

1 . A method comprising:

depositing a material on a patterned surface of a conductive substrate;

pressing a transparent substrate and said conductive substrate together, wherein said pressing causes said material to conform to said patterned surface;

applying energy to said material through the transparent substrate to form patterned material from said material; and

separating said transparent substrate and said conductive substrate, wherein said patterned material adheres to said transparent substrate.

2 . The method of claim 1 , further comprising etching said patterned material and said transparent substrate to form a negative image of said patterned surface.

3 . The method of claim 1 , wherein said patterned surface includes a release material, and wherein said transparent substrate includes an adhesion material.

4 . The method of claim 1 , wherein said conductive substrate is a silicon substrate.

5 . The method of claim 1 , wherein said transparent substrate is a fused silica substrate.

6 . The method of claim 1 , wherein said applying energy includes applying thermal energy.

7 . The method of claim 1 , wherein said applying energy includes applying light energy.

8 . A method comprising:

depositing a resist layer on a topographically patterned surface of a silicon substrate;

pressing a substantially planar surface of a substantially transparent substrate and said silicon substrate together, wherein said pressing causes said resist layer to conform to said topographically patterned surface;

hardening said resist layer by applying energy to said material through said substantially transparent substrate, wherein said silicon substrate absorbs a portion of said energy; and

separating said substantially transparent substrate and said silicon substrate, wherein said resist layer adheres to said substantially planar surface of said substantially transparent substrate.

9 . The method of claim 8 , further comprising removing said resist layer and a portion of said substantially transparent substrate to form a patterned surface in said substantially transparent substrate.

10 . The method of claim 8 , further comprising applying a non-adhesive material to said topographically patterned surface.

11 . The method of claim 8 , further comprising applying an adhesive material to said substantially transparent substrate.

12 . The method of claim 8 , wherein said substantially transparent substrate is a fused silica substrate.

13 . The method of claim 8 , said applying energy includes applying thermal energy.

14 . The method of claim 8 , said applying energy includes applying ultra violet light energy.

15 . An apparatus comprising:

a topographically patterned surface of a silicon substrate;

a substantially transparent substrate; and

a resist layer disposed between said silicon substrate and said substantially transparent substrate, wherein

said silicon substrate and said substantially transparent substrate are operable to be pressed together,

said substantially transparent substrate is operable to allow energy to pass therethrough, and

said resist layer is operable to adhere to said substantially transparent substrate.

16 . The apparatus of claim 15 , wherein said substantially transparent substrate is operable to be etched to form a negative image of said topographically patterned surface.

17 . The apparatus of claim 15 , further comprising a release material disposed on said topographically patterned surface, and an adhesion material disposed on said substantially transparent substrate.

18 . The apparatus of claim 15 , wherein said substantially transparent substrate is a fused silica substrate.

19 . The apparatus of claim 15 , wherein said energy is thermal energy.

20 . The apparatus of claim 15 , wherein said energy is ultra violet light energy.