Integrated heat assisted magnetic recording head with extended cavity vertical cavity surface emitting laser diode

1. An apparatus comprising:

a transducer assembly including a waveguide and a grating structured to couple electromagnetic radiation into the waveguide; and

an extended cavity vertical cavity surface emitting laser diode forming a slider body that comprises an air bearing surface, wherein the transducer assembly is positioned adjacent to a first end of the slider body and the laser diode directs electromagnetic radiation onto the grating.

2. The apparatus of claim 1 , wherein the laser diode includes one of GaAs or InGaP active elements coupled to an external cavity comprising one of silicon, glass, sapphire, or SiC.

3. The apparatus of claim 1 , wherein the transducer assembly and the laser diode are bonded together using one of:

solder, frit, epoxy, metal-metal diffusion bonding, direct bonding, or plasma enhanced direct bonding.

4. The apparatus of claim 1 , wherein the grating comprises an angled blazed grating.

5. The apparatus of claim 1 , wherein the laser diode comprises:

an active element proximate the first end;

a mirror proximate a second end that is opposed to the first end of the slider body; and

a transparent section that extends between the active element and the mirror.

6. An apparatus comprising:

a storage medium;

a recording head; and

an arm for positioning the recording head adjacent to the storage medium;

wherein the recording head includes a transducer assembly including a waveguide and a grating structured to couple electromagnetic radiation into the waveguide; and an extended cavity vertical cavity surface emitting laser diode forming a slider body that comprises an air bearing surface, wherein the transducer assembly is positioned adjacent to a first end of the slider body and the laser diode directs electromagnetic radiation onto the grating.

7. The apparatus of claim 6 , wherein the laser diode includes one of GaAs or InGaP active elements coupled to an external cavity comprising one of silicon, glass, sapphire, or SiC.

8. The apparatus of claim 6 , wherein the transducer assembly and the laser diode are bonded together using one of:

solder, frit, epoxy, metal-metal diffusion bonding, direct bonding, or plasma enhanced direct bonding.

9. The apparatus of claim 6 , wherein the grating comprises an angled blazed grating.

10. The apparatus of claim 6 , wherein the laser diode comprises:

an active element proximate the first end;

a mirror proximate a second end that is opposed to the first end of the slider body; and

a transparent section that extends between the active element and the mirror.

11. A method comprising:

forming a plurality of vertical cavity surface emitting laser diode active regions on a first surface of a transparent substrate;

forming a plurality of mirrors on a second surface of the substrate, wherein each of the mirrors is aligned with one of the vertical cavity surface emitting laser diode active regions to form an extended cavity and slider body there between;

fabricating a plurality of transducer portions on the substrate to form a plurality of recording heads; and

separating the recording heads.

12. The method of claim 11 , wherein the step of forming a plurality of vertical cavity surface emitting laser diode active regions on a first surface of a transparent substrate comprises:

forming the plurality of vertical cavity surface emitting laser diode active regions on a transfer substrate; and

transferring the plurality of vertical cavity surface emitting laser diode active regions to the first surface of the transparent substrate.

13. The method of claim 11 , wherein the step of forming a plurality of vertical cavity surface emitting laser diode active regions on a first surface of a transparent substrate comprises:

forming the plurality of vertical cavity surface emitting laser diode active regions in a wafer; and

bonding the wafer to the transparent substrate.

14. The method of claim 11 , wherein the step of forming a plurality of mirrors on a second surface of the substrate comprises:

depositing a transparent mold layer on the second surface of the substrate;

depositing a resist layer on the mold layer;

patterning the resist layer to form resist islands;

etching the mold layer to form curved surfaces; and

depositing a mirror layer on the curved surfaces.

15. The method of claim 11 , wherein the step of forming a plurality of mirrors on a second surface of the substrate comprises:

depositing a resist layer on the second surface of the substrate;

patterning the resist layer to form resist islands;

etching the second surface to form curved surfaces; and

depositing a mirror layer on the curved surfaces.

16. The method of claim 11 , further comprising:

forming alignment marks on the first and second surfaces of the substrate.

17. A method comprising:

forming a plurality of vertical cavity surface emitting laser diode active regions on a first surface of a transparent substrate;

forming a plurality of mirrors on a second surface of the substrate, wherein each of the mirrors is aligned with one of the vertical cavity surface emitting laser diode active regions to form an extended cavity and slider body there between;

bonding a plurality of transducer portions to the vertical cavity surface emitting laser diode active regions to form a plurality of recording heads; and

separating the recording heads.

18. The method of claim 17 , wherein the step of bonding the wafer to the vertical cavity surface emitting laser diode active regions uses a patterned layer of bonding material.

19. The method of claim 17 , wherein the step of bonding the wafer to the vertical cavity surface emitting laser diode active regions uses a continuous layer of bonding material.

20. The method of claim 17 , wherein the transducer portions and the vertical cavity surface emitting laser diode active regions are bonded together using one of:

solder, frit, epoxy, metal-metal diffusion bonding, direct bonding, or plasma enhanced direct bonding.