IP Library › Granted Patent US 6,667,515
Granted Patent Utility
US 6,667,515 · Confirmation No. 5406

HIGH BREAKDOWN VOLTAGE SEMICONDUCTOR DEVICE

Inventor: Tomoki Inoue
Patented Case View Patent ↗ View Publication ↗
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2003-10-16 IFEE Issue Fee Payment (PTO-85B) 1 View
2002-01-24 TRNA Transmittal of New Application 2 View
2002-01-24 ADS Application Data Sheet 1 View
2002-01-24 SPEC Specification 51 View
2002-01-24 CLM Claims 11 View
2002-01-24 ABST Abstract 1 View
2002-01-24 DRW Drawings-only black and white line drawings 13 View
2002-01-24 OATH Oath or Declaration filed 2 View
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Quick Facts
Patent No.
US 6,667,515
App. No.
10/053,660
Filed
2002-01-24
Granted
2003-12-23
Pub. No.
US20020100935A1
Art Unit
2818
PTA
0 days