Deposition over mixed substrates
View Patent ↗Chemical vapor deposition methods are used to deposit silicon-containing films over mixed substrates. Such methods are useful in semiconductor manufacturing to provide a variety of advantages, including uniform deposition over heterogeneous surfaces, high deposition rates, and higher manufacturing productivity. An example is in forming the base region of a heterojunction bipolar transistor, including simultaneous deposition over both single crystal semiconductor surfaces and amorphous insulating regions.
1. A deposition method comprising:
providing a substrate disposed within a chamber, wherein the substrate comprises a first surface having a first surface morphology and a second surface having a second surface morphology different from the first surface morphology, the first surface morphology being single crystalline and the second surface morphology being amorphous, polycrystalline or a mixture of amorphous and crystalline material;
introducing trisilane to the chamber under chemical vapor deposition conditions; and
depositing a Si-containing film onto the substrate over both of the first surface and the second surface.
2. The deposition method of claim 1 , further comprising introducing a germanium source to the chamber simultaneously with the trisilane, thereby depositing a SiGe film as the Si-containing film.
3. The deposition method of claim 2 , wherein the SiGe film comprises from about 0.1 atomic % to about 80 atomic % germanium.
4. The deposition method of claim 1 , wherein the first surface comprises a semiconductor material and the second surface comprises a dielectric material.
5. The deposition method of claim 4 , wherein the semiconductor material comprises silicon and a dopant selected from the group consisting of arsenic, boron, indium, phosphorous, and antimony.
6. The deposition method of claim 4 , wherein the dielectric material comprises a material selected from the group consisting of silicon dioxide, silicon nitride, metal oxide and metal silicate.
7. The deposition method of claim 1 , wherein the Si-containing film is a silicon buffer layer having a thickness of about 500 Å or less.
8. The deposition method of claim 7 , further comprising introducing a germanium source a silicon source to the chamber to thereby deposit a SiGe film onto the buffer layer.
9. The deposition method of claim 8 , wherein the silicon source comprises trisilane.
10. The deposition method of claim 1 , wherein at least a portion of the first surface is non-coplanar with at least a portion of the second surface.
11. The deposition method of claim 10 , wherein the Si-containing film has a first thickness T 1 over the first surface and a second thickness T 2 over the second surface such that T 1 :T 2 is in the range of about 10:1 to about 1:10.
12. The deposition method of claim 11 , wherein the chemical vapor deposition conditions comprise a temperature in the range of about 400° C. to about 750° C.
13. The deposition method of claim 11 , wherein the Si-containing film has a first thickness T 1 over the first surface and a second thickness T 2 over the second surface such that T 1 :T 2 is in the range of about 2:1 to about 1:2.
14. The deposition method of claim 13 , wherein the Si-containing film has a first thickness T 1 over the first surface and a second thickness T 2 over the second surface such that T 1 :T 2 is in the range of about 1.3:1 to about 1:1.3.
15. The deposition method of claim 1 , further comprising introducing a dopant precursor to the chamber, thereby depositing an in situ doped Si-containing film as the Si-containing film.
16. The deposition method of claim 1 , wherein the Si-containing film comprises a crystalline morphology over the first surface and a non-crystalline morphology over the second surface.
17. A deposition method comprising:
providing a substrate disposed within a chamber, wherein the substrate comprises a first surface having a single crystalline morphology and a second surface having a surface morphology different from the single crystalline morphology;
introducing trisilane and a germanium source to the chamber under chemical vapor deposition conditions; and
depositing a SiGe film onto the substrate over both of the first surface and the second surface.
18. The deposition method of claim 17 , wherein the SiGe film comprises from abut 0.1 atomic % to about 80 atomic % germanium.