Patent Assignment
Reel/Frame 056465/0280
Assignment of Assignor's Interest
Recorded: 2021-03-04
Pages: 23
Assignor
ASM AMERICA, INC.
Executed: 2020-12-15
Assignee
ASM IP HOLDING B.V.
VERSTERKERSTRAAT 8, ALMERE, 1322 AP, NETHERLANDS
Covered Properties
(207)
Dual Orientation Leveling Platform for Semiconductor Apparatus
Patent:
6,394,440 →
Application:
09/624,127 →
Loadlock with Integrated Pre-Clean Chamber
Patent:
7,018,504 →
Application:
09/658,784 →
Semiconductor Handling Robot with Improved Paddle-Type End Effector
Patent:
6,585,478 →
Application:
09/709,782 →
Susceptor Pocket Profile to Improve Process Performance
Transfer Chamber with Integral Loadlock and Staging Station
Stable, Oxide-Free Silicon Surface Preparation
Barrier Coating for Vitreous Materials
High Temperature Drop-Off of a Substrate
Method and Apparatus to Correct Wafer Drift
Docking Cart with Integrated Load Port
Heat Lamps for Zone Heating
Surface Preparation Prior to Deposition
Dopant Precursors and Processes
Process for Deposition of Semiconductor Films
Process for Deposition of Semiconductor Films
Thin Films and Method of Makinlg Them
Deposition Over Mixed Substrates
Integration of High K Gate Dielectric
Pyrometer Calibrated Wafer Temperature Estimator
Patent:
6,596,973 →
Application:
10/096,138 →
Wafer Holder with Peripheral Lift Ring
Method of Loading a Wafer Onto a Wafer Holder to Reduce Thermal Shock
Wafer Holder with Stiffening Rib
Delicate Product Packaging System
Plasma Etch Resistant Coating and Process
Low Temperature Load and Bake
Semiconductor Wafer Position Shift Measurement and Correction
Lamp Filament Design
Method and Apparatus for Chemical Synthesis
Led Heat Lamp Arrays for Cvd Heating
Deposition of Amorphous Silicon-Containing Films
Bonded Structures for Use in Semiconductor Processing Environments
Slit Valve for a Semiconductor Processing System
Incorporation of Nitrogen into High K Dielectric Film
System for the Improved Handling of Wafers Within a Process Tool
Patent:
6,696,367 →
Application:
10/260,821 →
Localized Heating of Substrates Using Optics
High Temperature Drop-Off of a Substrate
Dopant Precursors and Processes
Dopant Precursors and Ion Implantation Processes
Light Scattering Process Chamber Walls
Patent:
6,720,531 →
Application:
10/317,267 →
Gridded Susceptor
Lamp Design
Substrate Holder with Deep Annular Groove to Prevent Edge Heat Loss
Patent:
6,709,267 →
Application:
10/331,444 →
Out-Of-Pocket Detection System Using Wafer Rotation as an Indicator
Front Opening Unified Pod
Methods for Depositing Polycrystalline Films with Engineered Grain Structures
Silicon-On-Insulator Structures and Methods
Semiconductor Handling Robot with Improved Paddle-Type End Effector
Patent:
7,168,911 →
Application:
10/437,207 →
Wafer Edge with Light Sensor
Sensor Signal Transmission from Processing System
Reduced Cross-Contamination Between Chambers in a Semiconductor Processing Tool
Susceptor Pocket Profile to Improve Process Performance
Pyrometer Calibrated Wafer Temperature Estimator
Bubbler for Substrate Processing
Method to Form Ultra High Quality Silicon-Containing Compound Layers
Surface Preparation Prior to Deposition
Surface Preparation Prior to Deposition
Sublimation Bed Employing Carrier Gas Guidance Structures
High Temperature Drop-Off of a Substrate
Staggered Ribs on Process Chamber to Reduce Thermal Effects
Non-Contact Cool-Down Station for Wafers
Reactor Chamber
Susceptor Pocket Profile to Improve Process Performance
Enhanced Selectivity for Epitaxial Deposition
Apparatus and Methods for Preventing Rotational Slippage Between a Vertical Shaft and a Support Structure for a Semiconductor Wafer Holder
Reduced Cross-Contamination Between Chambers in a Semiconductor Processing Tool
Method to Planarize and Reduce Defect Density of Silicon Germanium
Epitaxial Semiconductor Deposition Methods and Structures
Sige Rectification Process
Reactor Surface Passivation Through Chemical Deactivation
Methods for Depositing Amorphous Materials and Using Them as Templates for Epitaxial Films by Solid Phase Epitaxy
Optimization Algorithm to Optimize Within Substrate Uniformities
Semiconductor Wafer Position Shift Measurement and Correction
Deposition of Silicon Germanium on Silicon-on-Insulator Structures and Bulk Substrates
Epitaxial Growth of Relaxed Silicon Germanium Layers
Wafer Holder with Peripheral Lift Ring
Surface Preparation Prior to Deposition on Germanium
Deposition Over Mixed Substrates
Gas Mixer and Manifold Assembly for Ald Reactor
Deposition from Liquid Sources
Process for Deposition of Semiconductor Films
Reaction System for Growing a Thin Film
Lamp Filament Design
Epitaxial Semiconductor Deposition Methods and Structures
Substrate Support System for Reduced Autodoping and Backside Deposition
Non-Contact Cool-Down Station for Wafers
Germanium Deposition
Slit Valve for a Semiconductor Processing System
In Situ Growth of Oxide and Silicon Layers
Process for Deposition of Semiconductor Films
Incorporation of Nitrogen into High K Dielectric Film
Apparatus and Methods for Isolating Chemical Vapor Reactions at a Substrate Surface
Integration of High K Gate Dielectric
Thin Films and Methods of Making Them
Silicon Surface Preparation
Remote Plasma Activated Nitridation
Reaction System for Growing a Thin Film
Methods of Depositing Electrically Active Doped Crystalline Si-Containing Films
Selective Deposition of Silicon-Containing Films
Methods of Making Substitutionally Carbon-Doped Crystalline Si-Containing Materials by Chemical Vapor Deposition
Low Temperature Load and Bake
Plasma Pre-Treating Surfaces for Atomic Layer Deposition
System for Control of Gas Injectors
Method of Forming Non-Conformal Layers
Heteroepitaxial Deposition Over an Oxidized Surface
Oxygen Bridge Structures and Methods to Form Oxygen Bridge Structures
Method of Supporting a Substrate in a Gas Cushion Susceptor System
Bubbler for Substrate Processing
Surface Preparation Prior to Deposition
Low Temperature Load and Bake
Dual Channel Heterostructure
Ald of Metal Silicate Films
Strained Layers Within Semiconductor Buffer Structures
Lamp Fasteners for Semiconductor Processing Reactors
Epitaxial Semiconductor Deposition Methods and Structures
Selective Epitaxial Formation of Semiconductor Films
Reactor Surface Passivation Through Chemical Deactivation
Valve with High Temperature Rating
Reactor Surface Passivation Through Chemical Deactivation
Polymer Coating for Vapor Deposition Tool
Vapor Deposition of Metal Carbide Films
Controlled Composition Using Plasma-Enhanced Atomic Layer Deposition
Deposition of Amorphous Silicon-Containing Films
Passivated Stoichiometric Metal Nitride Films
Plasma-Enhanced Ald of Tantalum Nitride Films
Process for Deposition of Semiconductor Films
Epitaxial Deposition of Doped Semiconductor Materials
Surface Preparation Prior to Deposition on Germanium
High Temperature Ald Inlet Manifold
Movable Radiant Heat Sources
Deposition from Liquid Sources
Substrate Handling Chamber with Movable Substrate Carrier Loading Platform
Periodic Plasma Annealing in an Ald-Type Process
Epitaxial Semiconductor Deposition Methods and Structures
Deposition Over Mixed Substrates Using Trisilane
Thin Films and Methods of Making Them
Stressor for Engineered Strain on Channel
Germanium Deposition
Ald of Metal Silicate Films
Precursor Delivery System
Plasma-Enhanced Deposition of Metal Carbide Films
Method to Form Ultra High Quality Silicon-Containing Compound Layers
Reaction Apparatus Having Multiple Adjustable Exhaust Ports
Inhibitors for Selective Deposition of Silicon Containing Films
Methods of Selectively Depositing Silicon-Containing Films
Redundant Temperature Sensor for Semiconductor Processing Chambers
Separate Injection of Reactive Species in Selective Formation of Films
Stable Silicide Films and Methods for Making the Same
Doping with Ald Technology
Plasma-Enhanced Deposition Process for Forming a Metal Oxide Thin Film and Related Structures
Plasma-Enhanced Pulsed Deposition of Metal Carbide Films
Thermocouple
Thermocouple
Incorporation of Nitrogen into High K Dielectric Film
Susceptor Ring
Methods of Making Substitutionally Carbon-Doped Crystalline Si-Containing Materials by Chemical Vapor Deposition
Silicon Surface Preparation
Etching High-K Materials
Self-Centering Susceptor Ring Assembly
Calibration of Temperature Control System for Semiconductor Processing Chamber
Process and Apparatus for Treating Wafers
Gap Maintenance for Opening to Process Chamber
Method and Apparatus for Minimizing Contamination in Semiconductor Processing Chamber
Gas Mixer and Manifold Assembly for Ald Reactor
Epitaxial Growth of Relaxed Silicon Germanium Layers
Substrate Reactor with Adjustable Injectors for Mixing Gases Within Reaction Chamber
Selective Etching of Reactor Surfaces
Process for Deposition of Semiconductor Films
Method to Form Ultra High Quality Silicon-Containing Compound Layers
High Concentration Water Pulses for Atomic Layer Deposition
Epitaxial Semiconductor Deposition Methods and Structures
Strained Layers Within Semiconductor Buffer Structures
Method of Forming Non-Conformal Layers
Cyclical Epitaxial Deposition and Etch
Separate Injection of Reactive Species in Selective Formation of Films
Substrate Support System for Reduced Autodoping and Backside Deposition
Plasma-Enhanced Atomic Layer Deposition of Conductive Material Over Dielectric Layers
Deposition from Liquid Sources
Load Lock Having Secondary Isolation Chamber
A Structure Comprises an as-Deposited Doped Single Crystalline Si-Containing Film
Reactive Site Deactivation Against Vapor Deposition
Deposition of Ruthenium or Ruthenium Dioxide
Rapid Bake of Semiconductor Substrate with Upper Linear Heating Elements Perpendicular to Horizontal Gas Flow
High Temperature Ald Inlet Manifold
High Throughput Cyclical Epitaxial Deposition and Etch Process
Ald of Metal Silicate Films
Reaction Apparatus Having Multiple Adjustable Exhaust Ports
Susceptor with Ring to Limit Backside Deposition
Pulsed Valve Manifold for Atomic Layer Deposition
Patent:
9,574,268 →
Application:
13/284,738 →
Gas Mixer and Manifold Assembly for Ald Reactor
In-Situ Pre-Clean Prior to Epitaxy
Vapor Flow Control Apparatus for Atomic Layer Deposition
Precursor Delivery System
Methods for Depositing an Epitaxial Silicon Germanium Layer Having a Germanium to Silicon Ratio Greater Than 1:1 Using Silylgermane and a Diluent
Selective Epitaxial Formation of Semiconductive Films
Reaction System for Growing a Thin Film
Method for Minimizing Contamination in Semiconductor Processing Chamber
Load Lock Having Secondary Isolation Chamber
Plasma-Enhanced Atomic Layer Deposition of Conductive Material Over Dielectric Layers
Atomic Layer Deposition of Metal Carbide Films Using Aluminum Hydrocarbon Compounds
Self-Centering Susceptor Ring Assembly
Reaction System for Growing a Thin Film
Vapor Flow Control Apparatus for Atomic Layer Deposition
Selective Etching of Reactor Surfaces
Pulsed Valve Manifold for Atomic Layer Deposition
System for Rapid Bake of Semiconductor Substrate with Upper Linear Heating Elements Perpendicular to Horizontal Gas Flow
Susceptor Ring
Patent:
600,223 →
Application:
29/322,630 →
Reactant Source Vessel
Patent:
614,153 →
Application:
29/334,984 →