Method to form ultra high quality silicon-containing compound layers

1. A method of forming a layer, of an insulating silicon compound, having a desired thickness for an integrated circuit, comprising:

performing multiple chemical vapor deposition cycles in a reaction chamber, each cycle comprising:

first, depositing a silicon layer on a substrate by exposing the substrate to a silicon source, wherein the silicon layer has a silicon layer thickness between about 3 Å and 25 Å, wherein depositing the silicon layer is performed under mass transport limited deposition conditions; and

second, reacting the silicon layer to partially form the layer of an insulating silicon compound, wherein trisilane is the silicon source used to deposit a first silicon layer on the substrate in a first performance of a cycle of the plurality of cycles, wherein the silicon-containing compound layer has a thickness non-uniformity of about 5% or less and a step coverage of about 80% or greater.

2. The method of claim 1 , wherein reacting comprises nitriding and wherein the insulating silicon compound is silicon nitride.

3. The method of claim 2 , wherein the layer of an insulating silicon compound has a stoichiometry of about 43 silicon atoms per 56 nitrogen atoms.

4. The method of claim 1 , wherein reacting comprises oxidizing and wherein the insulating silicon compound is silicon oxide.

5. The method of claim 1 , wherein a second silicon source for depositing subsequent silicon layers after depositing the first silicon layer comprises a silicon compound selected from the group consisting of silanes having a silane chemical formula Si n H 2n+2 , where n =1 to 4, and halosilanes having a halosilane chemical formula R 4−X SiH X , where R=C1, Br or I and X=0 to 3.

6. The method of claim 5 , wherein all silicon layers deposited after the first silicon layer are formed with the same second silicon source.

7. The method of claim 1 , wherein a first substrate temperature for depositing the first silicon layer is less than about 525° C.

8. The method of claim 7 , wherein the first substrate temperature is less than about 475° C.

9. The method of claim 8 , wherein a second substrate temperature for reacting the first silicon layer is greater than the first substrate temperature.

10. The method of claim 9 , wherein depositing and reacting are performed isothermally after reacting the first silicon layer.

11. The method of claim 10 , wherein a third substrate temperature for depositing and reacting, after reacting the first silicon layer, is between about 400° C. and 650° C.

12. The method of claim 11 , wherein the third substrate temperature is greater than about 525° C.

13. The method of claim 9 , further comprising evacuating the reaction chamber for at least about 10 seconds before reacting the first silicon layer.

14. The method of claim 9 , wherein the first silicon layer has a first silicon layer thickness of about 8-12 Å.

15. The method of claim 14 , wherein a temperature and a duration for reacting are chosen to prevent reacting the substrate under the silicon layer.

16. The method of claim 14 , wherein reacting the silicon layer comprises exposing the silicon layer to an atomic species.

17. The method of claim 16 , wherein the atomic species is atomic nitrogen.

18. The method of claim 1 , wherein the reaction chamber is a single substrate laminar flow reaction chamber.

19. The method of claim 1 , wherein a temperature for reacting is less than about 650° C.

20. The method of claim 1 , wherein a thickness of the first silicon layer on the substrate is about greater than or equal to a nitridation saturation depth.