Deposition of amorphous silicon-containing films
View Patent ↗Chemical vapor deposition methods are used to deposit amorphous silicon-containing films over various substrates. Such methods are useful in semiconductor manufacturing to provide a variety of advantages, including uniform deposition over heterogeneous surfaces, high deposition rates, and higher manufacturing productivity. Preferably, the deposited amorphous silicon-containing film is annealed to produce crystalline regions over all or part of an underlying substrate.
1. A deposition method comprising:
providing a substrate disposed within a chamber, the substrate comprising a first surface having an exposed single crystalline surface morphology and a second surface having an exposed second surface morphology different from the single crystalline surface morphology;
introducing trisilane to the chamber under chemical vapor deposition conditions comprising a pressure in the range of about 1 Torr to about 350 Torr and a temperature in the range of about 350° C. to about 530° C.;
depositing an amorphous Si-containing film onto the substrate over both of the first surface and the second surface, the amorphous Si-containing film having a first thickness T 1 over the first surface and a second thickness T 2 over the second surface such that T 1 :T 2 is in the range of about 1.2:1 to about 1:1.2; and
annealing the amorphous Si-containing film to form a crystalline Si-containing film, wherein the crystalline Si-containing film over the first surface is a single crystal and the crystalline Si-containing film over the second surface is polycrystalline.
2. The method of claim 1 in which the introducing of the trisilane to the chamber is conducted at a flow rate of about 50 sccm or greater.
3. The method of claim 1 in which the first surface comprises a semiconductor material and the second surface comprises a dielectric material.
4. The method of claim 1 further comprising introducing a precursor to the chamber, the precursor being selected from the group consisting of a germanium source, a silicon source, a carbon source, a boron source, a gallium source, an indium source, an arsenic source, a phosphorous source, an antimony source, a nitrogen source and an oxygen source.
5. The method of claim 4 in which the precursor is a germanium source.
6. The method of claim 5 in which the amorphous Si-containing film is a SiGe film.
7. The method of claim 4 in which the precursor is a silicon source.
8. The method of claim 7 in which the silicon source is silane or disilane.
9. The method of claim 1 in which the amorphous Si-containing film has an average thickness of about 300 Å or less.
10. The method of claim 1 in which the annealing is conducted at a temperature in the range of about 500° C. to about 1100° C.
11. The method of claim 1 in which the annealing is conducted at a temperature in the range of about 500° C. to about 750° C.
12. The method of claim 1 in which the crystalline Si-containing film is selected from the group consisting of silicon, doped silicon, SiC, doped SiC, SiGe, doped SiGe, SiGeC, and doped SiGeC.
13. A deposition method comprising:
providing a substrate disposed within a chamber, the substrate comprising a first surface having an exposed first surface morphology and a second surface having an exposed second surface morphology different from the first surface morphology;
introducing trisilane to the chamber under chemical vapor deposition conditions comprising a pressure in the range of about 0.1 Torr to about 850 Torr;
depositing an amorphous Si-containing film onto the substrate over both of the first surface and the second surface, the amorphous Si-containing film having a first thickness T 1 over the first surface and a second thickness T 2 over the second surface such that T 1 :T 2 is in the range of about 1.2:1 to about 1:1.2; and;
annealing the amorphous Si-containing film to form a crystalline Si-containing film, wherein the crystalline Si-containing film over the first surface is a single crystal and the crystalline Si-containing film over the second surface is polycrystalline;
the first surface morphology being single crystalline and the second surface morphology being amorphous, polycrystalline or a mixture of amorphous and crystalline material.
14. The method of claim 13 in which the first surface comprises a semiconductor material and the second surface comprises a dielectric material.