Methods of making substitutionally carbon-doped crystalline Si-containing materials by chemical vapor deposition
View Patent ↗Methods of making Si-containing films that contain relatively high levels of substitutional dopants involve chemical vapor deposition using trisilane and a dopant precursor. Extremely high levels of substitutional incorporation may be obtained, including crystalline silicon films that contain 2.4 atomic % or greater substitutional carbon. Substitutionally doped Si-containing films may be selectively deposited onto the crystalline surfaces of mixed substrates by introducing an etchant gas during deposition.
1. A doped single crystalline silicon film comprising substitutional carbon, the single crystalline silicon film having a lattice spacing of 5.38 Å or less and less than about 0.3 atomic % non-substitutional carbon.
2. The doped single crystalline silicon film of claim 1 , wherein the lattice spacing is 5.36 Å or less.
3. The doped single crystalline silicon film of claim 1 , wherein the lattice spacing is 5.34 Å or less.
4. The doped single crystalline silicon film of claim 1 , further comprising a dopant selected from the group consisting of phosphorous and arsenic.
5. The doped single crystalline silicon film of claim 4 , having a resistivity of about 1.0 mΩ·cm or less.
6. The doped single crystalline silicon film of claim 4 , having a resistivity of about 0.7 mΩ·cm or less.
7. A single crystalline silicon film comprising 2.4 atomic % or greater substitutional carbon and less than about 0.3 atomic % non-substitutional carbon, as determined by x-ray diffraction and Vegard's Law.
8. The single crystalline silicon film of claim 7 , comprising 2.7 atomic % or greater substitutional carbon.
9. The single crystalline silicon film of claim 7 , comprising 3.0 atomic % or greater substitutional carbon.
10. The single crystalline silicon film of claim 7 , comprising less than about 0.2 atomic % non-substitutional carbon.
11. The single crystalline silicon film of claim 7 , having a tensile stress of about 1.0 GPa or greater.
12. The single crystalline silicon film of claim 11 , having a tensile stress of about 1.5 GPa or greater.
13. The single crystalline silicon film of claim 11 , having a tensile stress of about 1.7 GPa or greater.
14. The single crystalline silicon film of claim 11 , having a tensile stress of about 1.85 GPa or greater.
15. The single crystalline silicon film of claim 11 , having a tensile stress of about 2.0 GPa or greater.
16. The single crystalline silicon film of claim 7 , having a film thickness of about 200 nm or less.
17. The single crystalline silicon film of claim 7 , further comprising an underlying single crystalline silicon substrate.
18. The single crystalline silicon film of claim 17 , wherein the underlying single crystalline silicon substrate has a lattice spacing of about 5.43 Å.
19. The single crystalline silicon film of claim 17 , recessed in the underlying single crystalline silicon substrate.
20. A single crystalline silicon film comprising 3.0 atomic % or greater substitutional carbon, as determined by x-ray diffraction and Vegard's Law.
21. The single crystalline silicon film of claim 20 , comprising less than about 0.2 atomic % non-substitutional carbon.
22. The single crystalline silicon film of claim 20 , having a tensile stress of about 1.0 GPa or greater.
23. The single crystalline silicon film of claim 20 , having a tensile stress of about 1.5 GPa or greater.
24. The single crystalline silicon film of claim 20 , having a tensile stress of 1.7 GPa or greater.
25. The single crystalline silicon film of claim 20 , having a tensile stress of 1.85 GPa or greater.
26. The single crystalline silicon film of claim 20 , further comprising an underlying single crystalline silicon substrate.
27. The single crystalline silicon film of claim 25 , wherein the underlying single crystalline silicon substrate has a lattice spacing of about 5.34 Å.