Deposition over mixed substrates
View Patent ↗Chemical vapor deposition methods are used to deposit silicon-containing films over mixed substrates. Such methods are useful in semiconductor manufacturing to provide a variety of advantages, including uniform deposition over heterogeneous surfaces, high deposition rates, and higher manufacturing productivity. An example is in forming the base region of a heterojunction bipolar transistor, including simultaneous deposition over both single crystal semiconductor surfaces and amorphous insulating regions.
1. A deposition method comprising:
providing a substrate disposed within a chamber, wherein the substrate comprises a first surface having a first surface morphology and a second surface having a second surface morphology different from the first surface morphology, wherein the first surface morphology is single crystalline;
introducing trisilane to the chamber under chemical vapor deposition conditions;
depositing a Si-containing film onto the substrate over both of the first surface and the second surface; and
introducing a germanium source to the chamber simultaneously with the trisilane, thereby depositing a SiGe film as the Si-containing film.
2. The deposition method of claim 1 , wherein the SiGe film comprises from about 0.1 atomic % to about 80 atomic % germanium.
3. A deposition method comprising:
providing a substrate disposed within a chamber, wherein the substrate comprises a first surface having a first surface morphology and a second surface having a second surface morphology different from the first surface morphology;
introducing trisilane to the chamber under chemical vapor deposition conditions; and
depositing a Si-containing film onto the substrate over both of the first surface and the second surface;
wherein at least a portion of the first surface is non-coplanar with at least a portion of the second surface; and
wherein the Si-containing film has a first thickness T 1 over the first surface and a second thickness T 2 over the second surface such that T 1 :T 2 is in the range of about 10:1 to about 1:10.
4. The deposition method of claim 3 , wherein the chemical vapor deposition conditions comprise a temperature in the range of about 400° C. to about 750° C.
5. The deposition method of claim 3 , wherein the Si-containing film has a first thickness T 1 over the first surface and a second thickness T 2 over the second surface such that T 1 :T 2 is in the range of about 2:1 to about 1:2.
6. The deposition method of claim 5 , wherein the Si-containing film has a first thickness T 1 over the first surface and a second thickness T 2 over the second surface such that T 1 :T 2 is in the range of about 1.3:1 to about 1:1.3.
7. A high-rate deposition method comprising:
delivering trisilane to a mixed substrate surface under chemical vapor deposition conditions, at a delivery rate of at least about 0.001 milligrams per minute per square centimeter of the mixed substrate surface; and
depositing a silicon-containing material onto the mixed substrate surface at a rate of about 10 Å per minute or greater.
8. The high-rate deposition method of claim 7 , wherein the mixed substrate surface comprises an exposed conductive material and an exposed dielectric material.
9. The high-rate deposition method of claim 8 , wherein the conductive material comprises a crystalline semiconductor.
10. The high-rate deposition method of claim 9 , wherein the crystalline semiconductor comprises a dopant selected from the group consisting of boron, gallium, indium, phosphorus, arsenic and antimony.
11. The high-rate deposition method of claim 7 , further comprising delivering a germanium source to the mixed substrate surface to thereby deposit a SiGe material as the silicon-containing material.
12. The high-rate deposition method of claim 11 , wherein the delivering of the germanium source to the mixed substrate surface is conducted at a delivery rate of at least about 0.001 milligrams per minute per square centimeter of the mixed substrate surface.
13. A method for making a base structure for a heterojunction bioplar transistor (HBT), comprising:
providing a substrate surface comprising an active area and an insulator; and
supplying trisilane to the substrate surface under conditions effective to deposit a Si-containing film onto the substrate directly onto each of the active area and the insulator;
wherein the Si-containing film has a first thickness T 1 over the active area and a second thickness T 2 over the insulator such that T 1 :T 2 is in the range of about 2:1 to about 1:2.
14. The method of claim 13 , wherein the Si-containing film has a first thickness T 1 over the active area and a second thickness T 2 over the insulator such that T 1 :T 2 is in the range of about 1.3:1 to about 1:1.3.
15. The method of claim 13 , further comprising supplying a germanium source to the substrate surface simultaneously with the trisilane under conditions effective to deposit a SiGe film as the Si-containing film.
16. The method of claim 13 , wherein the Si-containing film is a nucleation layer having a thickness in the range of about 10 Å to about 500 Å:
the method further comprising supplying a mixture comprising trisilane and a germanium source to the nucleation layer under conditions effective to deposit a SiGe film onto the nucleation layer.