Selective epitaxial formation of semiconductive films
View Patent ↗Epitaxial layers are selectively formed in semiconductor windows by a cyclical process of repeated blanket deposition and selective etching. The blanket deposition phases leave non-epitaxial material over insulating regions, such as field oxide, and the selective etch phases preferentially remove non-epitaxial material while deposited epitaxial material builds up cycle-by-cycle. Quality of the epitaxial material improves relative to selective processes where no deposition occurs on insulators. Use of a germanium catalyst during the etch phases of the process aid etch rates and facilitate economical maintenance of isothermal and/or isobaric conditions throughout the cycles. Throughput and quality are improved by use of trisilane, formation of amorphous material over the insulating regions and minimizing the thickness ratio of amorphous:epitaxial material in each deposition phase.
1. A method of selectively forming epitaxial semiconductor material, comprising:
providing a substrate with insulating regions and semiconductor windows formed therein;
blanket depositing non-epitaxial silicon-containing semiconductor material over the insulating regions and epitaxial silicon-containing semiconductor material over the semiconductor windows by flowing a carbon source vapor with trisilane over the substrate wherein the silicon-containing semiconductor material comprises carbon-doped silicon, and wherein the silicon-containing semiconductor material over the semiconductor windows comprises at least about 1.0% substitutional carbon as-deposited;
selectively etching the non-epitaxial, non-single-crystal, silicon-containing semiconductor material from over the insulating regions while leaving at least some epitaxial silicon-containing semiconductor material in the semiconductor windows by exposing the substrate to a halide gas source and a germanium source, wherein the germanium source comprises a germanium etch catalyst;
repeating blanket depositing and selectively removing in a plurality of cycles; and
wherein blanket depositing and selectively removing produces a net growth rate of the silicon-containing material of between about 4 nm/min and 11 nm/min,
wherein in each depositing step, a thickness ratio of non-epitaxial semiconductor material over the insulating regions to the epitaxial silicon-containing semiconductor material over the semiconductor windows is less than about 1.6:1.
2. The method of claim 1 , wherein the semiconductor windows comprises recesses below upper surfaces of the insulating regions and repeating comprises filling the recesses with epitaxial silicon-containing semiconductor material.
3. The method of claim 2 , wherein depositing comprises filling the recesses with carbon-doped silicon to form recessed source/drain structures.
4. The method of claim 3 , wherein depositing further comprises in situ supplying electrical dopants to the recessed source/drain structures.
5. The method of claim 3 , wherein depositing further comprises forming a carbon-free capping layer over the carbon-doped silicon.
6. The method of claim 1 , wherein the semiconductor windows comprises recesses below upper surfaces of the insulating regions and the epitaxial silicon-containing semiconductor material in the recesses exerts lateral tensile strain on an adjacent region.
7. The method of claim 6 , wherein selectively removing further comprises removing silicon-containing epitaxial material from sidewalls of the recesses while leaving silicon-containing epitaxial material at bottoms of the recesses.
8. The method of claim 1 , wherein the ratio is between about 1.0:1 and 1.3:1.