Structure comprises an As-deposited doped single crystalline Si-containing film
View Patent ↗Methods of making Si-containing films that contain relatively high levels of Group III or Group V dopants involve chemical vapor deposition using trisilane and a dopant precursor. Extremely high levels of substitutional incorporation may be obtained, including crystalline silicon films that contain at least about 3×10 20 atoms cm −3 of an electrically active dopant. Substitutionally doped Si-containing films may be selectively deposited onto the crystalline surfaces of mixed substrates by introducing an etchant gas during deposition.
1. An structure comprising:
a substrate; and
an as-deposited doped single crystalline Si-containing film directly on the substrate comprising at least about 3×10 20 atoms cm −3 of substitutional n-dopant, containing less than about 3×10 19 atoms cm −3 of an electrically inactive dopant and having a resistivity of 0.7 mΩ·cm or less, wherein the as-deposited doped single crystalline Si-containing film and substrate have a dopant profile consistent with a layer deposited by chemical vapor deposition (CVD) without post-deposition annealing.
2. The structure of claim 1 , wherein the n-dopant comprises phosphorous or arsenic.
3. The structure of claim 2 , wherein the as-deposited doped single crystalline Si-containing film further comprises substitutional germanium.
4. The structure of claim 1 , wherein the as-deposited doped single crystalline Si-containing film has a resistivity of about 0.5mΩ·cm or less.
5. The structure of claim 1 , wherein the as-deposited doped single crystalline Si-containing film has a resistivity of about 0.4mΩ·cm or less.
6. The structure of claim 1 , wherein the as-deposited doped single crystalline Si-containing film comprises at least about 4×10 20 atoms cm −3 of the n-dopant.
7. The structure of claim 1 , wherein the as-deposited doped single crystalline Si-containing film comprises germanium.
8. The structure of claim 1 , wherein the as-deposited doped single crystalline Si-containing film contains less than about 2×10 19 atoms cm −3 of an electrically inactive dopant.
9. The structure of claim 1 , wherein the as-deposited doped single crystalline Si-containing film contains less than about 1×10 19 atoms cm −3 of an electrically inactive dopant.
10. An integrated circuit, comprising the structure comprising the as-deposited doped single crystalline Si-containing film of claim 1 .
11. The integrated circuit of claim 10 , wherein the as-deposited doped single crystalline Si-containing film comprises a contact block that comprises the doped single crystalline Si-containing film.
12. The integrated circuit of claim 10 , wherein the as-deposited doped single crystalline Si-containing film comprises an epitaxial emitter that comprises the doped single crystalline Si-containing film.