IP Library Granted Patent US 6,964,804
Granted Patent B2
US 6,964,804 · App. 10/076,858 · Granted Nov 15, 2005

Micromachined structures made by combined wet and dry etching

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Quick Facts
Patent No.
US 6,964,804
App. No.
10/076,858
Granted
Nov 15, 2005
Kind
B2
Abstract

A micromachined structure, comprising: a substarte; a first wet etched pit disposed in the substrate; a second wet etched pit disposed in the substrate, the second pit extending into the substrate a greater depth than the first pit; and a dry pit disposed between, and adjacent to, the first and second pits. Also disclosed is a micromachined substrate comprising: a wet etched pit; and a dry-etched hole disposed in the wet etched pit, wherein the dry hole extends through the substrate.

Claims (23)

1. A micromachined structure, comprising:

a substrate;

a first wet-etched pit disposed in the substrate;

a second wet-etched pit disposed in the substrate, the second wet-etched pit extending into the substrate a greater depth than the first wet-etched pit and comprising a flat surface parallel to the upper surface of the substrate; and

a dry-etched pit disposed between, and adjacent to, the first and second wet-etched pits.

2. The micromachined structure of claim 1 , wherein the substrate comprises < 100 > silicon.

3. The micromachined structure of claim 1 , wherein the first wet-etched pit comprises a flat surface parallel to the upper surface of the substrate.

4. The micromachined structure of claim 3 , comprising at least one of a VCSEL or a photodetector mounted to the flat surface of the second wet-etched pit.

5. A micromachined structure comprising:

a substrate;

a first wet-etched pit disposed in the substrate;

a second wet-etched pit disposed in the substrate, the second wet-etched pit extending into the substrate a greater depth than the first wet-etched pit; and

a dry-etched pit disposed between, and adjacent to, the first and second wet-etched pits;

wherein the dry-etched pit is disposed within the second wet-etched pit and wherein the dry-etched pit circumscribes the first wet-etched pit.

6. The micromachined structure of claim 1 , wherein the first wet-etched comprises a V-shaped cross-section.

7. A micromachined structure comprising:

a substrate;

a first wet-etched pit disposed in the substrate;

a second wet-etched pit disposed in the substrate, the second wet-etched pit extending into the substrate a greater depth than the first wet-etched pit; and

a dry-etched pit disposed between, and adjacent to, the first and second wet-etched pits;

wherein the first wet-etched pit comprises a V-shaped cross-section and the second wet-etched pit comprises a pyramidal pit.

8. The micromachined substrate of claim 7 , comprising a ball lens disposed in the second wet-etched pit and an optical fiber disposed in the first wet-etched pit.

9. The micromachined structure of claim 1 , wherein the dry-etched pit is a linear trench.

Assignments (3)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 23, 2011
From: IP CUBE PARTNERS CO. LTD.
To: SAMSUNG ELECTRONICS CO., LTD.
Reel/Frame 026323/0651 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 14, 2011
From: NUVOTRONICS, LLC
To: IP CUBE PARTNERS CO. LTD.
Reel/Frame 025950/0807 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 22, 2010
From: ROHM AND HAAS ELECTRONIC MATERIALS LLC
To: NUVOTRONICS, LLC
Reel/Frame 024571/0939 →