Nitride-based semiconductor element and method of forming nitride-based semiconductor
A nitride-based semiconductor element having superior mass productivity and excellent element characteristics is obtained. This nitride-based semiconductor element comprises a substrate comprising a surface having projection portions, a mask layer formed to be in contact with only the projection portions of the surface of the substrate, a first nitride-based semiconductor layer formed on recess portions of the substrate and the mask layer and a nitride-based semiconductor element layer, formed on the first nitride-based semiconductor layer, having an element region. Thus, the first nitride-based semiconductor layer having low dislocation density is readily formed on the projection portions of the substrate and the mask layer through the mask layer serving for selective growth. When the nitride-based semiconductor element layer having the element region is grown on the first nitride-based semiconductor layer having low dislocation density, a nitride-based semiconductor element having excellent element characteristics can be readily obtained. The first nitride-based semiconductor layer is formed through only single growth on the substrate, whereby a nitride-based semiconductor element having excellent mass productivity is obtained.
1. A nitride-based semiconductor element comprising: a substrate comprising a surface having projection portions;
a mask layer formed to be in contact with only said projection portions of said surface of said substrate;
a first nitride-based semiconductor layer formed on recess portions of said substrate and said mask layer; and
a nitride-based semiconductor element layer, formed on said first nitride-based semiconductor layer, having an element region.
2. The nitride-based semiconductor element according to claim 1 , wherein
said substrate includes a substrate selected from a group consisting of a sapphire substrate, a spinel substrate, an Si substrate, an SiC substrate, a GaN substrate, a GaAs substrate, a GaP substrate, an InP substrate, a ZrB 2 substrate and a quartz substrate.
3. The nitride-based semiconductor element according to claim 2 , wherein
said substrate includes a sapphire substrate, and said mask layer and said projection portions of said surface of said substrate are formed in the shape of stripes being parallel to the [1-100 ] direction of said sapphire substrate.
4. The nitride-based semiconductor element according to claim 2 , wherein
said substrate includes an Si substrate, and
said mask layer and said projection portions of said surface of said substrate are formed in the shape of stripes being parallel to the [1-10] direction of said Si substrate.
5. The nitride-based semiconductor element according to claim 1 , further comprising a buffer layer formed on the interface between said recess portions of said substrate and said first nitride-based semiconductor layer.
6. A method of forming a nitride-based semiconductor comprising steps of:
forming projection portions on a surface on a substrate;
forming a mask layer to be in contact with only said projection portions of said surface of said substrate; and
growing a first nitride-based semiconductor layer initially on recess portions of said substrate and then on said mask layer through said mask layer.
7. The method of forming a nitride-based semiconductor according to claim 6 , further comprising a step of forming a buffer layer on said recess portions of said substrate in advance of said step of growing said first nitride-based semiconductor layer.
8. The method of forming a nitride-based semiconductor according to claim 6 , Wherein
said steps of forming said projection portions on said surface on said substrate and forming said mask layer include a step of forming said mask layer on the surface of said substrate and thereafter etching the surface of said substrate through said mask layer thereby simultaneously forming said projection portions on said surface of said substrate and said mask layer coming into contact with only said projection portions of said surface.
9. The method of forming a nitride-based semiconductor according to claim 6 , further comprising a step of growing a nitride-based semiconductor element layer having an element region on said first nitride-based semiconductor layer.
10. The method of forming a nitride-based semiconductor according to claim 6 , wherein
said substrate includes a substrate selected from a group consisting of a sapphire substrate, a spinal substrate, an Si substrate, an SiC substrate, a GaN substrate, a GaAs substrate, a GaP substrate, an InP substrate, a ZrB 2 substrate and a quartz substrate.
11. The method of forming a nitride-based semiconductor according to claim 10 , wherein
said substrate includes a sapphire substrate, and
said mask layer and said projection portions of said surface of said substrate are formed in the shape of stripes being parallel to the [1-100] direction of said sapphire substrate.
12. The method of forming a nitride-based semiconductor according to claim 10 , wherein
said substrate includes an Si substrate, and
said mask layer and said projection portions of said surface of said substrate are formed in the shape of stripes being parallel to the [1-10] direction of said Si substrate.