Patent Assignment
Reel/Frame 041652/0122
Assignment of Assignor's Interest
Recorded: 2017-03-20
Pages: 6
Assignor
SANYO ELECTRIC CO., LTD.
Executed: 2017-01-31
Assignee
EPISTAR CORPORATION
5, LI-HSIN 5TH RD., HSINCHU SCIENCE PARK,, HSINCHU, 300, TAIWAN
Covered Properties
(61)
Compound Semiconductor Device Based on Gallium Nitride
Patent:
6,388,275 →
Application:
09/463,985 →
Electrode of N-Type Nitridide Semiconductor, Semiconductor Device Having the Electrode, and Method of Fabricating the Same
Patent:
6,130,446 →
Application:
09/113,301 →
Method of Forming Nitride Based Semiconductor Layer
Patent:
6,319,742 →
Application:
09/361,246 →
Semiconductor Device and Method of Fabricating the Same and Method of Forming Nitride Based Semiconductor Layer
Semiconductor Device and Method of Fabricating the Same and Method of Forming Nitride Based Semiconductor Layer
Nitride Based Semiconductor Device with Film for Preventing Short Circuiting
Semiconductor Device with SIO2 Film Formed on Side Surface of Nitride Based Semiconductor Layer
Semiconductor Device and Method of Fabricating the Same
Patent:
6,577,006 →
Application:
09/473,405 →
Semiconductor Device and Method of Fabricating the Same
Semiconductor Light Emitting Device
Patent:
6,580,736 →
Application:
09/533,970 →
A Semiconductor Led Composed of Group Iii Nitrided Emission and Fluorescent Layers
Semiconductor Device and Method of Fabricating the Same
Patent:
6,534,800 →
Application:
09/666,557 →
Method of Fabricating Semiconductor Device
Nitride-Based Semiconductor Device and Manufacturing Method Thereof
Nitride-Based Semiconductor Device and Manufacturing Method Thereof
Method of Forming Nitride-Based Semiconductor Layer, and Method of Manufacturing Nitride-Based Semiconductor Device
Nitride-Based Semiconductor Element and Method of Forming Nitride-Based Semiconductor
Nitride-Based Semiconductor Element
Method of Forming a Nitride-Based Semiconductor
Nitride-Based Semiconductor Element and Method of Forming Nitride-Based Semiconductor
Nitride-Based Semiconductor Light-Emitting Device
Nitride-Based Semiconductor Element and Method of Forming Nitride-Based Semiconductor
Nitride-Based Semiconductor Light-Emitting Device and Method of Fabricating the Same
Nitride-Based Semiconductor Light-Emitting Device and Method of Fabricating the Same
Nitride-Based Semiconductor Light-Emitting Device and Method of Fabricating the Same
Nitride-Based Semiconductor Light-Emitting Device and Method of Fabricating the Same
Nitride-Based Semiconductor Light-Emitting Device
Light-Emitting Device and Illuminator
Light-Emitting Device and Illuminator
Semiconductor Light-Emitting Device
Nitride-Based Light-Emitting Device and Method of Manufacturing the Same
Nitride-Based Light-Emitting Device and Method of Manufacturing the Same
Nitride-Based Light-Emitting Device and Method of Manufacturing the Same
Nitride-Based Semiconductor Light-Emitting Device
Light-Emitting Device Having a Support Substrate and Inclined Sides
Manufacturing Method of Nitride Semiconductor Device and Nitride Semiconductor Device
Manufacturing Method of Nitride Semiconductor Device and Nitride Semiconductor Device
Method for Manufacturing Nitride-Base Semiconductor Element and Nitride-Base Semiconductor Element
Method of Fabricating Nitride-Based Semiconductor Light-Emitting Device and Nitride-Based Semiconductor Light-Emitting Device
Semiconductor Light Emitting Element and Semiconductor Light Emitting Device
Light Emitting Device and Method for Manufacturing the Same
Light Emitting Device
Semiconductor Device
Semiconductor Device
Method of Manufacturing Nitride Semicondctor Device
Illumination Device and Manufacturing Method Thereof
Semiconductor Light-Emitting Device, Illuminator and Method of Manufacturing Semiconductor Light-Emitting Device
Semiconductor Light-Emitting Device
Method of Manufacturing Semiconductor Device and Semiconductor Device
Method of Manufacturing Semiconductor Device and Semiconductor Device
Method of Manufacturing Semiconductor Device and Semiconductor Device
Nitride-Based Semiconductor Light-Emitting Device, Nitride-Based Semiconductor Laser Device, Nitride-Based Semiconductor Light-Emitting Diode, Method of Manufacturing the Same, and Method of Forming Nitride-Based Semiconductor Layer
Nitride-Based Semiconductor Device and Method of Manufacturing the Same
Light Emitting Device with Cap Layer
Patent:
5,990,496 →
Application:
08/847,471 →
Manufacturing Method of Light Emitting Device
Patent:
42,074 →
Application:
10/321,516 →
Nitride-Based Semiconductor Element and Method of Forming Nitride-Based Semiconductor
Nitride-Based Semiconductor Element and Method of Forming Nitride-Based Semiconductor
Nitride-Based Semiconductor Element and Method of Forming Nitride-Based Semiconductor
Semiconductor Device
Semiconductor Device and Method of Fabricating the Same
Method of Fabricating a Semiconductor Device with a Back Electrode
Related Assignments
(18)
Other recorded transfers of the patents in this record — the chain of ownership.
Assignment of Assignor's Interest
Jul 10, 1998
From: TAKEUCHI, KUNIO; HAYASHI, NOBUHIKO; NOMURA, YASUHIKO; TOMINAGA, KOUJI
To: SANYO ELECTRIC CO., LTD.
Reel/Frame 009318/0636 →
Assignment of Assignor's Interest
May 17, 1999
From: ASTOR CORPORATION
To: ADCO PRODUCTS, INC.
Reel/Frame 009960/0773 →
Assignment of Assignor's Interest
Jul 27, 1999
From: HAYASHI, NOBUHIKO; KANO, TAKASHI
To: SANYO ELECTRIC CO., LTD.
Reel/Frame 010137/0704 →
Assignment of Assignor's Interest
Dec 28, 1999
From: OOTA, KIYOSHI; HAYASHI, NOBUHIKO
To: SANYO ELECTRIC CO., LTD.
Reel/Frame 010515/0824 →
Assignment of Assignor's Interest
May 2, 2000
From: KANO, TAKASHI
To: SANYO ELECTRIC CO., LTD.
Reel/Frame 010815/0170 →
Assignment of Assignor's Interest
Jul 28, 2000
From: YOSHIE, TOMOYUKI; GOTO, TAKENORI; HAYASHI, NOBUHIKO
To: SANYO ELECTRIC CO., LTD.
Reel/Frame 011032/0162 →
Assignment of Assignor's Interest
Sep 21, 2000
From: OHBO, HIROKI; HAYASHI, NOBUHIKO
To: SANYO ELECTRIC CO., LTD.
Reel/Frame 011129/0936 →
Assignment of Assignor's Interest
Mar 21, 2001
From: KANO, TAKASHI; OHBO, HIROKI
To: SANYO ELECTRIC CO., LTD.
Reel/Frame 011626/0302 →
Assignment of Assignor's Interest
Aug 30, 2001
From: KANO, TAKASHI; OHBO, HIROKI; HAYASHI, NOBUHIKO
To: SANYO ELECTRIC CO., LTD.
Reel/Frame 012130/0282 →
Assignment of Assignor's Interest
Oct 30, 2001
From: TOMINAGA, KOUJI
To: SANYO ELECTRIC CO., LTD.
Reel/Frame 012293/0241 →
Corrective Assignment to Correct the Assignee's Address, Previously Recorded at Reel 012130 Frame 0282.
Dec 28, 2001
From: KANO, TAKASHI; OHBO, HIROKI; HAYASHI, NOBUHIKO
To: SANYO ELECTRIC CO., LTD.
Reel/Frame 012409/0133 →
Assignment of Assignor's Interest
Feb 28, 2002
From: HAYASHI, NOBUHIKO; KUNISATO, TATSUYA; OHBO, HIROKI; YAMAGUCHI, TSUTOMU
To: SANYO ELECTRIC CO., LTD.
Reel/Frame 012662/0992 →
Assignment of Assignor's Interest
Mar 30, 2012
From: SANYO ELECTRIC CO., LTD.
To: FUTURE LIGHT, LLC
Reel/Frame 027957/0258 →
Assignment of Assignor's Interest
Jan 31, 2013
From: SANYO ELECTRIC CO., LTD.
To: FUTURE LIGHT, LLC
Reel/Frame 029730/0704 →
Change of Name
Jan 31, 2013
From: TOTTORI SANYO ELECTRIC CO., LTD.
To: SANYO CONSUMER ELECTRONICS CO., LTD.
Reel/Frame 029732/0366 →
Merger
Jan 31, 2013
From: SANYO CONSUMER ELECTRONICS CO., LTD.
To: SANYO ELECTRIC CO., LTD.
Reel/Frame 029732/0460 →
Assignment of Assignor's Interest
Nov 1, 2016
From: FUTURE LIGHT LIMITED LIABILITY COMPANY
To: SANYO ELECTRIC CO., LTD.
Reel/Frame 040523/0797 →
Assignment of Assignor's Interest
Nov 6, 2023
From: EPISTAR CORPORATION
To: LEDVANCE GMBH
Reel/Frame 065469/0005 →