Semiconductor device with SiO
A GaN layer is grown on a sapphire substrate, an SiO 2 film is formed on the GaN layer, and a GaN semiconductor layer including an MQW active layer is then grown on the GaN layer and the SiO 2 film using epitaxial lateral overgrowth. The GaN based semiconductor layer is removed by etching except in a region on the SiO 2 film, and a p electrode is then formed on the top surface of the GaN based semiconductor layer on the SiO 2 film, to join the p electrode on the GaN based semiconductor layer to an ohmic electrode on a GaAs substrate. An n electrode is formed on the top surface of the GaN based semiconductor layer.
1. A semiconductor device comprising:
a substrate;
a first electrode layer formed on said substrate;
a nitride based semiconductor layer formed on said first electrode layer and containing at least one of boron, gallium, aluminum and indium;
a second electrode layer formed on an upper surface of said nitride based semiconductor layer; and
an SiO 2 film formed on a side surface of said nitride based semiconductor layer and said first electrode.
2. The semiconductor device according to claim 1 , wherein
said nitride based semiconductor layer includes an active layer.
3. The semiconductor device according to claim 2 , wherein
said nitride based semiconductor layer has a striped current injection region for injecting a current into said active layer,
said striped current injection region formed along a <1-100> direction of said nitride based semiconductor layer.
4. The semiconductor device according to claim 3 , wherein
said nitride based semiconductor device has a pair of cavity facets,
said cavity facet has a {1-100} plane of said nitride based semiconductor layer.
5. The semiconductor device according to claim 1 , wherein
said second electrode layer is formed on said SiO 2 film.
6. The semiconductor device according to claim 1 , wherein
said second electrode layer is formed on said SiO 2 film on said first electrode layer.
7. The semiconductor device according to claim 1 , wherein
said nitride based semiconductor layer includes a p-type layer and an n-type layer,
said p-type layer is provided on a side of said first electrode layer,
said n-type layer is provided on a side of said second electrode layer.
8. The semiconductor device according to claim 1 , wherein
said SiO 2 film is extended on said upper surface of said nitride based semiconductor layer.