IP Library Assignment 027957/0258
Patent Assignment
Reel/Frame 027957/0258

Assignment of Assignor's Interest

Recorded: 2012-03-30 Pages: 11
Assignor
SANYO ELECTRIC CO., LTD.
Executed: 2012-03-08
Assignee
FUTURE LIGHT, LLC
200 WEST EVELYN AVENUE, SUITE 100, MOUNTAIN VIEW, CALIFORNIA, 94041
Covered Properties (58)
Method of Manufacturing Semiconductor Device and Semiconductor Device
Patent: 8,134,171 →
Application: 13/105,386 →
Publication: US 2011/0210365
Semiconductor Device
Patent: 8,334,577 →
Application: 12/402,196 →
Publication: US 2009/0174035
Semiconductor Element and Method for Manufacturing the Same
Application: 12/161,358 →
Publication: US 2010/0219419
Light-emitting diode apparatus
Application: 11/864,380 →
Publication: US 2008/0258156
Semiconductor Light-Emitting Device
Patent: 8,384,101 →
Application: 12/441,247 →
Publication: US 2010/0044731
Semiconductor Device and Method for Manufacturing the Same
Application: 12/970,027 →
Publication: US 2011/0085578
Nitride-Based Semiconductor Light-Emitting Device, Nitride-Based Semiconductor Laser Device, Nitride-Based Semiconductor Light-Emitting Diode, Method of Manufacturing the Same, and Method of Forming Nitride-Based Semiconductor Layer
Patent: 8,750,343 →
Application: 12/680,412 →
Publication: US 2010/0246624
Nitride-Based Semiconductor Light-Emitting Diode, Nitride-Based Semiconductor Laser Device, Method of Manufacturing the Same, and Method of Forming Nitride-Based Semiconductor Layer
Application: 12/809,770 →
Publication: US 2010/0265981
Semiconductor Device, Method of Manufacturing Semiconductor Device and Optical Apparatus
Application: 12/909,136 →
Publication: US 2011/0101419
Method of Fabricating Nitride-Based Semiconductor Light-Emitting Device and Nitride-Based Semiconductor Light-Emitting Device
Patent: 8,519,416 →
Application: 12/576,813 →
Publication: US 2010/0025701
Semiconductor Light Emitting Device, Semiconductor Laser Device, and Method of Fabricating Semiconductor Light Emitting Device
Patent: 5,727,008 →
Application: 08/649,287 →
Compound Semiconductor Device Based on Gallium Nitride
Patent: 6,388,275 →
Application: 09/463,985 →
Electrode of N-Type Nitridide Semiconductor, Semiconductor Device Having the Electrode, and Method of Fabricating the Same
Patent: 6,130,446 →
Application: 09/113,301 →
Semiconductor Device and Method of Fabricating the Same
Patent: 6,577,006 →
Application: 09/473,405 →
Semiconductor Light Emitting Device
Patent: 6,580,736 →
Application: 09/533,970 →
A Semiconductor Led Composed of Group Iii Nitrided Emission and Fluorescent Layers
Patent: 6,677,617 →
Application: 09/984,604 →
Publication: US 2003/0080343
Nitride-Based Semiconductor Device and Manufacturing Method Thereof
Patent: 6,566,677 →
Application: 09/813,122 →
Publication: US 2001/0035531
Method of Forming Nitride-Based Semiconductor Layer, and Method of Manufacturing Nitride-Based Semiconductor Device
Patent: 6,821,807 →
Application: 09/941,982 →
Publication: US 2002/0048836
Nitride-Based Semiconductor Element and Method of Forming Nitride-Based Semiconductor
Patent: 6,759,139 →
Application: 10/081,842 →
Publication: US 2002/0127856
Nitride-Based Semiconductor Light-Emitting Device
Patent: 6,649,942 →
Application: 10/150,930 →
Publication: US 2002/0190263
Nitride-Based Semiconductor Element and Method of Forming Nitride-Based Semiconductor
Patent: 6,720,196 →
Application: 10/138,420 →
Publication: US 2002/0167028
Nitride-Based Semiconductor Light-Emitting Device
Patent: 7,485,902 →
Application: 10/663,714 →
Publication: US 2004/0061119
Light-Emitting Device and Illuminator
Patent: 7,078,735 →
Application: 10/807,161 →
Publication: US 2004/0188689
Semiconductor Light-Emitting Device
Patent: 6,998,649 →
Application: 10/951,816 →
Publication: US 2005/0067625
Nitride-Based Light-Emitting Device and Method of Manufacturing the Same
Patent: 7,592,630 →
Application: 11/047,580 →
Publication: US 2005/0173725
Nitride-Based Semiconductor Light-Emitting Device
Patent: 7,154,123 →
Application: 11/060,484 →
Publication: US 2005/0199891
Light-Emitting Device Having a Support Substrate and Inclined Sides
Patent: 7,968,897 →
Application: 11/059,508 →
Publication: US 2005/0199885
Manufacturing Method of Nitride Semiconductor Device and Nitride Semiconductor Device
Patent: 7,405,096 →
Application: 11/080,398 →
Publication: US 2005/0221590
Method for Manufacturing Nitride-Base Semiconductor Element and Nitride-Base Semiconductor Element
Patent: 7,488,667 →
Application: 11/356,964 →
Publication: US 2006/0194360
Semiconductor Light Emitting Element and Semiconductor Light Emitting Device
Patent: 7,723,738 →
Application: 11/442,277 →
Publication: US 2006/0267039
Light Emitting Device and Method for Manufacturing the Same
Patent: 7,750,551 →
Application: 11/524,256 →
Publication: US 2007/0069633
Light Emitting Device
Patent: 7,539,223 →
Application: 11/524,259 →
Publication: US 2007/0064751
Semiconductor Device
Patent: 7,518,204 →
Application: 11/518,235 →
Publication: US 2007/0057337
Method of Manufacturing Nitride Semicondctor Device
Patent: 7,759,219 →
Application: 11/524,258 →
Publication: US 2007/0066037
Illumination Device and Manufacturing Method Thereof
Patent: 7,768,204 →
Application: 11/710,405 →
Publication: US 2007/0228923
Semiconductor Light-Emitting Device, Illuminator and Method of Manufacturing Semiconductor Light-Emitting Device
Patent: 7,880,177 →
Application: 12/090,181 →
Publication: US 2009/0173952
Nitride-Based Semiconductor Device and Method of Manufacturing the Same
Patent: 8,022,427 →
Application: 12/429,854 →
Publication: US 2009/0267100
Method of Forming Nitride Based Semiconductor Layer
Patent: 6,319,742 →
Application: 09/361,246 →
Semiconductor Device and Method of Fabricating the Same
Patent: 6,534,800 →
Application: 09/666,557 →
Nitride-Based Semiconductor Element and Method of Forming Nitride-Based Semiconductor
Patent: 6,713,845 →
Application: 10/084,050 →
Publication: US 2002/0123162
Nitride-Based Semiconductor Light-Emitting Device and Method of Fabricating the Same
Patent: 6,977,953 →
Application: 10/200,771 →
Publication: US 2003/0020079
Method of Manufacturing Semiconductor Device and Semiconductor Device
Patent: 8,013,344 →
Application: 12/186,168 →
Publication: US 2009/0039473
Semiconductor Device and Method of Fabricating the Same and Method of Forming Nitride Based Semiconductor Layer
Patent: 7,388,234 →
Application: 11/054,956 →
Publication: US 2005/0145878
Nitride Based Semiconductor Device with Film for Preventing Short Circuiting
Patent: 7,768,030 →
Application: 12/149,960 →
Publication: US 2009/0114941
Semiconductor Device with SIO2 Film Formed on Side Surface of Nitride Based Semiconductor Layer
Patent: 7,977,701 →
Application: 12/818,694 →
Publication: US 2010/0252913
Semiconductor Device and Method of Fabricating the Same
Patent: 7,312,480 →
Application: 11/175,310 →
Publication: US 2006/0017073
Method of Forming a Nitride-Based Semiconductor
Patent: 7,279,344 →
Application: 11/518,174 →
Publication: US 2007/0001192
Light-Emitting Device and Illuminator
Patent: 7,932,527 →
Application: 11/475,186 →
Publication: US 2006/0237739
Nitride-Based Light-Emitting Device and Method of Manufacturing the Same
Patent: 7,488,613 →
Application: 11/907,649 →
Publication: US 2008/0064130
Nitride-Based Light-Emitting Device and Method of Manufacturing the Same
Patent: 7,892,874 →
Application: 12/495,122 →
Publication: US 2009/0263925
Manufacturing Method of Nitride Semiconductor Device and Nitride Semiconductor Device
Patent: 7,807,490 →
Application: 12/216,928 →
Publication: US 2008/0280445
Semiconductor Device and Method of Fabricating the Same and Method of Forming Nitride Based Semiconductor Layer
Patent: 6,872,982 →
Application: 09/955,600 →
Publication: US 2002/0022288
Method of Fabricating Semiconductor Device
Patent: 6,756,245 →
Application: 10/244,513 →
Publication: US 2003/0010983
Nitride-Based Semiconductor Element
Patent: 7,109,530 →
Application: 10/796,154 →
Publication: US 2004/0169193
Nitride-Based Semiconductor Light-Emitting Device and Method of Fabricating the Same
Patent: 7,209,505 →
Application: 11/520,583 →
Publication: US 2007/0012929
Nitride-Based Semiconductor Light-Emitting Device and Method of Fabricating the Same
Patent: 7,450,622 →
Application: 11/723,846 →
Publication: US 2007/0170442
Nitride-Based Semiconductor Device and Manufacturing Method Thereof
Patent: 6,872,967 →
Application: 10/411,286 →
Publication: US 2003/0173560
Nitride-Based Semiconductor Light-Emitting Device and Method of Fabricating the Same
Patent: 7,116,693 →
Application: 11/233,088 →
Publication: US 2006/0018353
Related Assignments (23)
Other recorded transfers of the patents in this record — the chain of ownership.
Assignment of Assignor's Interest May 17, 1996
From: KOGA, KAZUYUKI
To: SANYO ELECTRIC CO., LTD.
Reel/Frame 007997/0037 →
Assignment of Assignor's Interest Jul 10, 1998
From: TAKEUCHI, KUNIO; HAYASHI, NOBUHIKO; NOMURA, YASUHIKO; TOMINAGA, KOUJI
To: SANYO ELECTRIC CO., LTD.
Reel/Frame 009318/0636 →
Assignment of Assignor's Interest May 17, 1999
From: ASTOR CORPORATION
To: ADCO PRODUCTS, INC.
Reel/Frame 009960/0773 →
Assignment of Assignor's Interest Dec 28, 1999
From: OOTA, KIYOSHI; HAYASHI, NOBUHIKO
To: SANYO ELECTRIC CO., LTD.
Reel/Frame 010515/0824 →
Assignment of Assignor's Interest May 2, 2000
From: KANO, TAKASHI
To: SANYO ELECTRIC CO., LTD.
Reel/Frame 010815/0170 →
Assignment of Assignor's Interest Jul 28, 2000
From: YOSHIE, TOMOYUKI; GOTO, TAKENORI; HAYASHI, NOBUHIKO
To: SANYO ELECTRIC CO., LTD.
Reel/Frame 011032/0162 →
Assignment of Assignor's Interest Mar 21, 2001
From: KANO, TAKASHI; OHBO, HIROKI
To: SANYO ELECTRIC CO., LTD.
Reel/Frame 011626/0302 →
Assignment of Assignor's Interest Aug 30, 2001
From: KANO, TAKASHI; OHBO, HIROKI; HAYASHI, NOBUHIKO
To: SANYO ELECTRIC CO., LTD.
Reel/Frame 012130/0282 →
Assignment of Assignor's Interest Oct 30, 2001
From: TOMINAGA, KOUJI
To: SANYO ELECTRIC CO., LTD.
Reel/Frame 012293/0241 →
Corrective Assignment to Correct the Assignee's Address, Previously Recorded at Reel 012130 Frame 0282. Dec 28, 2001
From: KANO, TAKASHI; OHBO, HIROKI; HAYASHI, NOBUHIKO
To: SANYO ELECTRIC CO., LTD.
Reel/Frame 012409/0133 →
Assignment of Assignor's Interest Feb 25, 2002
From: KUNISATO, TATSUYA; HAYASHI, NOBUHIKO; OHBO, HIROKI; HATA, MASAYUKI
To: SANYO ELECTRIC CO., LTD.
Reel/Frame 012662/0716 →
Assignment of Assignor's Interest May 21, 2002
From: HATA, MASAYUKI; NOMURA, YASUHIKO; TAKEUCHI, KUNIO; YAMAGUCHI, TSUTOMU
To: SANYO ELECTRIC CO., LTD.
Reel/Frame 012919/0135 →
Assignment of Assignor's Interest Sep 28, 2007
From: HATA, MASAYUKI
To: SANYO ELECTRIC CO., LTD.
Reel/Frame 019897/0679 →
Assignment of Assignor's Interest Jul 29, 2008
From: HATA, MASAYUKI; NOMURA, YASUHIKO
To: SANYO ELECTRIC CO., LTD.
Reel/Frame 021306/0894 →
Assignment of Assignor's Interest Mar 13, 2009
From: TOKUNAGA, SEIICHI; TAKEUCHI, KUNIO
To: SANYO ELECTRIC CO., LTD.
Reel/Frame 022393/0180 →
Assignment of Assignor's Interest Oct 9, 2009
From: KANO, TAKASHI; HATA, MASAYUKI; NOMURA, YASUHIKO
To: SANYO ELECTRIC CO., LTD.
Reel/Frame 023353/0719 →
Assignment of Assignor's Interest Mar 26, 2010
From: HIROYAMA, RYOJI; MIYAKE, YASUTO; KUNO, YASUMITSU; BESSHO, YASUYUKI
To: SANYO ELECTRIC CO., LTD.
Reel/Frame 024147/0245 →
Assignment of Assignor's Interest Jun 21, 2010
From: HIROYAMA, RYOJI; MIYAKE, YASUTO; KUNOH, YASUMITSU; BESSHO, YASUYUKI
To: SANYO ELECTRIC CO., LTD.
Reel/Frame 024566/0844 →
Assignment of Assignor's Interest Oct 21, 2010
From: HATA, MASAYUKI; KUNOH, YASUMITSU
To: SANYO ELECTRIC CO., LTD.
Reel/Frame 025173/0436 →
Assignment of Assignor's Interest Nov 1, 2016
From: FUTURE LIGHT LIMITED LIABILITY COMPANY
To: SANYO ELECTRIC CO., LTD.
Reel/Frame 040523/0797 →
Assignment of Assignor's Interest Mar 20, 2017
From: SANYO ELECTRIC CO., LTD.
To: EPISTAR CORPORATION
Reel/Frame 041652/0122 →
Assignment of Assignor's Interest Nov 6, 2023
From: EPISTAR CORPORATION
To: LEDVANCE GMBH
Reel/Frame 065469/0005 →
Security Interest Jan 21, 2026
From: KODIAK AI, INC.
To: HORIZON TECHNOLOGY FINANCE CORPORATION
Reel/Frame 074459/0570 →