Nitride-based semiconductor light-emitting device and method of fabricating the same
A nitride-based semiconductor light-emitting device capable of stabilizing transverse light confinement is obtained. This nitride-based semiconductor light-emitting device comprises an emission layer, a cladding layer, formed on the emission layer, including a first nitride-based semiconductor layer and having a current path portion and a current blocking layer, formed to cover the side surfaces of the current path portion, including a second nitride-based semiconductor layer, while the current blocking layer is formed in the vicinity of the current path portion and a region having no current blocking layer is included in a region not in the vicinity of the current path portion. Thus, the width of the current blocking layer is reduced, whereby strain applied to the current blocking layer is relaxed. Consequently, the thickness of the current blocking layer can be increased, thereby stabilizing transverse light confinement.
1. A nitride-based semiconductor light-emitting device comprising:
an emission layer;
a p-type cladding layer, formed on said emission layer, including a projection portion forming a current path portion and a flat portion;
a dielectric current blocking layer, formed on the side surface of said projection portion of said p-type cladding layer and on said flat portion of said p-type cladding layer; and
a semiconductor layer absorbing light emitted from said emission layer, formed on said dielectric current blocking layer and on the side portion of said current path portion.
2. The nitride-based semiconductor light-emitting device according to claim 1 , wherein
Mg is doped into said p-type cladding layer.
3. The nitride-based semiconductor light-emitting device according to claim 1 , wherein
said semiconductor layer consists of a material formed under a lower temperature as compared with AlGaN.
4. The nitride-based semiconductor light-emitting device according to claim 1 , further comprising:
a p-type contact layer formed on the upper surface of said projection portion of said p-type cladding layer; and
a p-side electrode containing Pt or Pd formed to be in contact with said p-type contact layer.
5. The nitride-based semiconductor light-emitting device according to claim 4 , further comprising a pad electrode containing Au formed on said p-side electrode.
6. The nitride-based semiconductor light-emitting device according to claim 1 , wherein said emission layer is formed on a GaN substrate.
7. The nitride-based semiconductor light-emitting device according to claim 1 , wherein
the thickness of said dielectric current blocking layer is smaller than the thickness of said semiconductor layer.
8. The nitride-based semiconductor light-emitting device according to claim 1 , wherein
said semiconductor layer contains N and at least one element selected from a group consisting of B, Ga, Al, In and Tl.
9. The nitride-based semiconductor light-emitting device according to claim 1 , wherein
said dielectric current blocking layer includes an oxide film or a nitride film containing at least one element selected from a group consisting of Si, Ti and Zr.
10. A nitride-based semiconductor light-emitting device comprising:
a GaN substrate;
an n-type cladding layer of a nitride-based semiconductor and an emission layer of a nitride-based semiconductor, formed on the surface of said GaN substrate;
a p-type cladding layer of a nitride-based semiconductor, formed on said emission layer, including a surface having a projection portion and a flat portion;
a p-type contact layer of a nitride-based semiconductor, formed on said projection portion of said p-type cladding layer;
a dielectric current blocking layer, formed on the side portion of a current path portion formed by said projection portion of said p-type cladding layer and said p-type contact layer, and, on the upper surface of said flat portion of said p-type cladding layer;
a semiconductor layer formed on said dielectric current blocking layer;
a p-side electrode formed on said p-type contact layer; and
an n-side electrode formed on the back surface of said GaN substrate.
11. The nitride-based semiconductor light-emitting device according to claim 10 , wherein
said emission layer has a multiple quantum well structure of InGaN.
12. The nitride-based semiconductor light-emitting device according to claim 10 , wherein
said dielectric current blocking layer is formed on the side surfaces of said projection portion of said p-type cladding layer and on said flat portion of said p-type cladding layer.
13. The nitride-based semiconductor light-emitting device according to claim 10 , further comprising a second p-type contact layer formed, between said p-type contact layer and said p-side electrode, to cover the upper surface of said p-type contact layer and said semiconductor layer.
14. The nitride-based semiconductor light-emitting device according to claim 10 , wherein
the thickness of said dielectric current blocking layer is smaller than the thickness of said semiconductor layer.
15. The nitride-based semiconductor light-emitting device according to claim 10 , wherein
said semiconductor layer contains N and at least one element selected from a group consisting of B, Ga, Al, In and Ti.
16. The nitride-based semiconductor light-emitting device according to claim 10 , wherein
said dielectric current blocking layer includes an oxide film or a nitride film containing at least one element selected from a group consisting of Si, Ti, Tl and Zr.