Manufacturing method of nitride semiconductor device and nitride semiconductor device
Provided is a manufacturing method of a nitride semiconductor device having a nitride semiconductor substrate (e.g. GaN substrate) in which dislocation concentrated regions align in stripe formation, the dislocation concentrated regions extending from a front surface to a back surface of the substrate, the manufacturing method being for stacking each of a plurality of nitride semiconductor layers on the front surface of the substrate in a constant film thickness. Grooves are formed on the nitride semiconductor substrate in the immediate areas of dislocation concentrated regions. Each of the nitride semiconductor layers is formed as a crystal growth layer on the main surface of the nitride semiconductor substrate to which the grooves have been formed.
1. A manufacturing method of a nitride semiconductor device having a nitride semiconductor substrate in which dislocation concentrated regions align in stripe formation, the dislocation concentrated regions extending from a front surface to a back surface of the substrate, the manufacturing method comprising:
a stacking step of forming nitride semiconductor layers on the front surface of low dislocation regions of the substrate; and
a groove-forming step of, prior to the stacking step, performing groove-forming to at least the low dislocation regions of immediate areas of the dislocation concentrated regions on the front surface, wherein
pair grooves are formed at both sides of the dislocation concentrated regions, without etching the dislocation concentrated regions.
2. The manufacturing method of claim 1 , wherein the groove-forming step comprises:
a mask-forming sub step of forming etching masks on the front surface of the substrate excluding the dislocation concentrated regions as well as the immediate areas;
an etching substep of subjecting the front surface of the substrate to etching; and
a mask-removal sub step of removing the etching masks formed in the mask-forming substep.
3. The manufacturing method of claim 2 , wherein the etching masks are made of SiO 2 , and the etching substep is conducted by a reactive ion etching that uses Cl 2 gas.
4. The manufacturing method of claim 3 , wherein
a width and a depth of each resulting groove are within such ranges that restrain migration of the nitride semiconductor layers from inside to outside of the groove in the succeeding stacking step.
5. The manufacturing method of claim 2 , wherein
the groove-forming step is performed using anisotropic etching, so that each resulting groove has a substantially rectangular sectional form.
6. The manufacturing method of claim 2 , wherein
a sectional form of each resulting groove is formed as a mesa whose both side walls are inclined towards a corresponding dislocation concentrated region from the front surface of the substrate to a bottom wall of the groove.
7. The manufacturing method of claim 2 , wherein
a sectional form of each resulting groove is formed as a reverse mesa whose both side walls are inclined towards an opposite direction to a corresponding dislocation concentrated region from the front surface of the substrate to a bottom wall of the groove.
8. The manufacturing method of claim 1 , further comprising:
an orthogonal-groove forming step of, in parallel with the groove-forming step, forming grooves orthogonal to grooves resulting from the groove-forming step, on the front surface of the substrate in areas except for the dislocation concentrated regions.
9. The manufacturing method of claim 1 , wherein
the front surface and the back surface of the substrate are (0001) crystal planes.
10. The manufacturing method of claim 1 , wherein
an edge is formed at a boundary between a groove and a surface of the low dislocation region.
11. The manufacturing method of claim 1 , wherein
a groove is in a shape of stairs in a cross section.