IP Library Assignment 012130/0282
Patent Assignment
Reel/Frame 012130/0282

Assignment of Assignor's Interest

Recorded: 2001-08-30 Pages: 4
Assignors
KANO, TAKASHI
Executed: 2001-08-24
OHBO, HIROKI
Executed: 2001-08-24
HAYASHI, NOBUHIKO
Executed: 2001-08-24
Assignee
SANYO ELECTRIC CO., LTD.
2-5-5, KEIHANHONDORI, MORIGUCHI-CHI,, OSAKA 570-8677,, JAPAN
Covered Property (1)
Method of Forming Nitride-Based Semiconductor Layer, and Method of Manufacturing Nitride-Based Semiconductor Device
Patent: 6,821,807 →
Application: 09/941,982 →
Publication: US 2002/0048836
Related Assignments (4)
Other recorded transfers of the patent in this record — the chain of ownership.
Corrective Assignment to Correct the Assignee's Address, Previously Recorded at Reel 012130 Frame 0282. Dec 28, 2001
From: KANO, TAKASHI; OHBO, HIROKI; HAYASHI, NOBUHIKO
To: SANYO ELECTRIC CO., LTD.
Reel/Frame 012409/0133 →
Assignment of Assignor's Interest Mar 30, 2012
From: SANYO ELECTRIC CO., LTD.
To: FUTURE LIGHT, LLC
Reel/Frame 027957/0258 →
Assignment of Assignor's Interest Nov 1, 2016
From: FUTURE LIGHT LIMITED LIABILITY COMPANY
To: SANYO ELECTRIC CO., LTD.
Reel/Frame 040523/0797 →
Assignment of Assignor's Interest Mar 20, 2017
From: SANYO ELECTRIC CO., LTD.
To: EPISTAR CORPORATION
Reel/Frame 041652/0122 →