Granted Patent
Utility
US 6,759,139 · App. 10/081,842
Nitride-based semiconductor element and method of forming nitride-based semiconductor
Inventors:
Tatsuya Kunisato, Nobuhiko Hayashi, Hiroki Ohbo, Masayuki Hata, Tsutomu Yamaguchi
Patented Case
View Patent ↗
Granted: Jul 6, 2004
Filed: Feb 25, 2002
Inventors
Tatsuya Kunisato
Nobuhiko Hayashi
Hiroki Ohbo
Masayuki Hata
Tsutomu Yamaguchi
Assignee (at issue)
SANYO ELECTRIC CO., LTD.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.