Nitride-based semiconductor light-emitting device, nitride-based semiconductor laser device, nitride-based semiconductor light-emitting diode, method of manufacturing the same, and method of forming nitride-based semiconductor layer

1. A nitride-based semiconductor light-emitting diode comprising:

a substrate formed with a recess portion on a main surface, and

a nitride-based semiconductor layer having a light-emitting layer on said main surface and including a first side surface formed by a (000-1) plane formed to start from a first inner side surface of said recess portion and a second side surface formed on a region opposite to said first side surface with said light-emitting layer therebetween to start from a second inner side surface of said recess portion on said main surface.

2. The nitride-based semiconductor light-emitting diode according to claim 1 , wherein

said first inner side surface includes the (000-1) plane.

3. The nitride-based semiconductor light-emitting diode according to claim 1 , wherein

said first and second side surfaces are formed by crystal growth surfaces of said nitride-based semiconductor layer.

4. The nitride-based semiconductor light-emitting diode according to claim 1 , wherein

said second side surface is formed by a {A+B, A, −2A−B, 2A+B} plane (A and B satisfy A≧0 and B≧0, and at least either one of A and B is a nonzero integer).

5. The nitride-based semiconductor light-emitting diode according to claim 1 , wherein

said substrate is formed by a nitride-based semiconductor.

6. The nitride-based semiconductor light-emitting diode according to claim 1 , wherein

at least either said first or second side surface forms an obtuse angle with respect to said main surface.

7. The nitride-based semiconductor light-emitting diode according to claim 1 , wherein

said substrate includes a base substrate and an underlayer made of AlGaN formed on said base substrate,

where lattice constants of said base substrate and said underlayer are c 1 and c 2 respectively, c 1 and c 2 satisfy relation of c 1 >c 2 ,

said underlayer includes a crack,

said crack extends substantially parallel to said main surface and a (0001) plane of said underlayer,

said crack has a first inner side surface and a second inner surface, and

said first and second side surfaces start from said first and second inner side surfaces, respectively.

8. A method of manufacturing a nitride-based semiconductor light-emitting device, comprising steps of:

forming recess portions on a main surface of a substrate; and

forming a nitride-based semiconductor device layer having a light-emitting layer by growing facets of a (000-1) plane of a nitride-based semiconductor on regions corresponding to first side surfaces of said recess portions; and by growing reflection surfaces comprising of growth surfaces of said nitride-based semiconductor device layer; wherein said main surface of said substrate comprises of a (H, K, −H−K, 0) plane;

further wherein said recess portions extend in a striped manner in a [K, −H, −K+H, 0] direction within said main surface of said substrate;

further wherein said light-emitting layer has a main surface comprising of a (H, K, −H−K, 0) plane;

further wherein said reflection surfaces are grown on regions opposed to said facets; and extends to form a prescribed angle with said facets.

9. The method of manufacturing a nitride-based semiconductor light-emitting device according to claim 8 , wherein

said first side surfaces of said recess portions are formed by (000-1) planes.